SGP6N60UFDTU ,Discrete, High Performance IGBT with DiodeElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGR15N40L ,IGBTapplicationsApplication Strobe flash.C CCG GD-PAKG EI-PAKGE CE EAbsolute Maximum Ratings T = 2 ..
SGR15N40L ,IGBTFeaturesInsulated Gate Bipolar Transistors (IGBTs) with a trench • High input impedancegate structu ..
SGR20N40LTF ,Discrete, IGBTapplications• Straight Lead : SGU20N40L
SGR20N40LTF ,Discrete, IGBTFeaturesInsulated Gate Bipolar Transistors (IGBTs) with a trench • High input impedancegate structu ..
SGR20N40LTM ,Discrete, IGBTApplicationStrobe flash.C CCG GD-PAKG EI-PAKGE CE EAbsolute Maximum Ratings T = 25°C unless oth ..
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SGP6N60UFDTU
Discrete, High Performance IGBT with Diode
SGP6N60UFD IGBT SGP6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors • High speed switching (IGBTs) provides low conduction and switching losses. • Low saturation voltage : V = 2.1 V @ I = 3A CE(sat) C The UFD series is designed for applications such as motor • High input impedance control and general inverters where high speed switching is • CO-PAK, IGBT with FRD : t = 35ns (typ.) rr a required feature. Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C C G G TO-220 E E G C E Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description SGP6N60UFD Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage ± 20 V GES Collector Current @ T = 25°C6 A C I C Collector Current @ T = 100°C3 A C I Pulsed Collector Current 25 A CM (1) I Diode Continuous Forward Current @ T = 100°C4 A F C I Diode Maximum Forward Current 25 A FM P Maximum Power Dissipation @ T = 25°C30 W D C Maximum Power Dissipation @ T = 100°C12 W C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C stg Maximum Lead Temp. for Soldering T 300 °C L Purposes, 1/8” from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 4.0 °C/W θJC R (DIODE) Thermal Resistance, Junction-to-Case -- 7.0 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2002 SGP6N60UFD Rev. A1
