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SGP5N60RUFD
Short Circuit Rated IGBT
SGP5N60RUFD IGBT SGP5N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar • Short circuit rated 10us @ T = 100°C, V = 15V C GE Transistors (IGBTs) provide low conduction and switching • High speed switching losses as well as short circuit ruggedness. The RUFD • Low saturation voltage : V = 2.2 V @ I = 5A CE(sat) C series is designed for applications such as motor control, • High input impedance uninterrupted power supplies (UPS) and general inverters • CO-PAK, IGBT with FRD : t = 37ns (typ.) rr where short circuit ruggedness is a required feature. Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C C G G TO-220 E E G C E Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description SGP5N60RUFD Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage ± 20 V GES Collector Current @ T = 25°C8 A C I C Collector Current @ T = 100°C5 A C I Pulsed Collector Current 15 A CM (1) I Diode Continuous Forward Current @ T = 100°C8 A F C I Diode Maximum Forward Current 56 A FM T Short Circuit Withstand Time @ T = 100°C10 us SC C P Maximum Power Dissipation @ T = 25°C60 W D C Maximum Power Dissipation @ T = 100°C25 W C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C stg Maximum Lead Temp. for Soldering T 300 °C L Purposes, 1/8” from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 2.0 °C/W θJC R (DIODE) Thermal Resistance, Junction-to-Case -- 1.25 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA ©2002 SGP5N60RUFD Rev. A1
