SGP15N120 ,IGBTs & DuoPacks
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SGP15N120
IGBTs & DuoPacks
SGP15N120SGP15N120
SGW15N120
Fast IGBT in NPT-technology
• 40% lower Eoff compared to previous generation
• Short circuit withstand time – 10 μs
• Designed for:- Motor controls
- Inverter- SMPS
• NPT-Technology offers:
- very tight parameter distribution- high ruggedness, temperature stable behaviour
- parallel switching capability
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum RatingsSGP15N120SGP15N120
SGW15N120
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Dynamic Characteristic
SGP15N120SGP15N120
SGW15N120
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °CParameter
IGBT Characteristic
SGP15N120SGP15N120
SGW15N120
COLLE
OR CURRE
10Hz100Hz1kHz10kHz100kHz
10A
20A
30A
40A
50A
60A
COLLE
OR CURRE10V100V1000V0.1A
10A
100A
f, SWITCHING FREQUENCYVCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 33Ω)
Figure 2. Safe operating area(D = 0, TC = 25°C, Tj ≤ 150°C)
tot
ISS
25°C50°C75°C100°C125°C
25W
50W
75W
100W
125W
150W
175W
200W
COLLE
OR CURRE
25°C50°C75°C100°C125°C0A
10A
15A
20A
25A
30A
35A
TC, CASE TEMPERATURETC, CASE TEMPERATURE
Figure 3. Power dissipation as a functionof case temperature(Tj ≤ 150°C)
Figure 4. Collector current as a function ofcase temperature(VGE ≤ 15V, Tj ≤ 150°C)
SGP15N120SGP15N120
SGW15N120
COLLE
OR CURRE
10A
20A
30A
40A
COLLE
OR CURRE
VCE, COLLECTOR-EMITTER VOLTAGEVCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics(Tj = 25°C)
Figure 6. Typical output characteristics(Tj = 150°C)
COLLE
OR CURRE5V7V9V0A
10A
20A
30A
40A
CE(sat)
COLLE
CTOR
ITT
SATU
ATI
VO
-50°C0°C50°C100°C150°C0V
VGE, GATE-EMITTER VOLTAGETj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics(VCE = 20V)
Figure 8. Typical collector-emittersaturation voltage as a function of junction
temperature(VGE = 15V)
SGP15N120SGP15N120
SGW15N120
ITC
TI10A20A30A40A
10ns
100ns
1000ns
ITC
TI25Ω50Ω
10ns
100ns
1000ns
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 33Ω,
dynamic test circuit in Fig.E )
Figure 10. Typical switching times as a
function of gate resistor(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 15A,dynamic test circuit in Fig.E )
ITC
TI
-50°C0°C50°C100°C150°C10ns
100ns
1000ns
GE(th)
ITT
TH
ESH
-50°C0°C50°C100°C150°C
Tj, JUNCTION TEMPERATURETj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as afunction of junction temperature(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 15A, RG = 33Ω,
dynamic test circuit in Fig.E )
Figure 12. Gate-emitter threshold voltageas a function of junction temperature(IC = 0.3mA)
