SGH25N120RUFTU ,Discrete, Short Circuit Rated IGBTApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls. C CG G ..
SGH30N60RUFD ,Short Circuit Rated IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGH40N60UFD ,Ultra-Fast IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGH40N60UFDTU ,Discrete, High Performance IGBT with DiodeFeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors• High speed switching(IGBTs) ..
SGH40N60UFDTU ,Discrete, High Performance IGBT with DiodeElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGH40N60UFDTU ,Discrete, High Performance IGBT with DiodeApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls. C CG G ..
SII1390CTU , PanelLink /HDCP Transmitters
SII1390CTU , PanelLink /HDCP Transmitters
SII3531A , PCI Express to Serial ATA Controller
SII3531ACNU , PCI Express to Serial ATA Controller
SII3531ACNU , PCI Express to Serial ATA Controller
SII3531ACNU , PCI Express to Serial ATA Controller
SGH25N120RUFTU
Discrete, Short Circuit Rated IGBT
SGH25N120RUF IGBT SGH25N120RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors • Short circuit rated 10μs @ T = 100°C, V = 15V C GE (IGBTs) provides low conduction and switching losses as • High speed switching well as short circuit ruggedness. The RUF series is • Low saturation voltage : V = 2.3 V @ I = 25A CE(sat) C designed for applications such as motor control, • High input impedance uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C C G G E E TO-3P G C E Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description SGH25N120RUF Units V Collector-Emitter Voltage 1200 V CES V Gate-Emitter Voltage ± 25 V GES Collector Current @ T = 25°C40 A C I C Collector Current @ T = 100°C25 A C I Pulsed Collector Current 75 A CM (1) T Short Circuit Withstand Time @ T = 100°C10 μs SC C P Maximum Power Dissipation @ T = 25°C 270 W D C Maximum Power Dissipation @ T = 100°C 108 W C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C stg Maximum Lead Temp. for soldering T 300 °C L Purposes, 1/8” from case for 5 seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R Thermal Resistance, Junction-to-Case -- 0.46 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2001 SGH25N120RUF Rev. A1
