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SGH20N60RUFDTU

Discrete, Short Circuit Rated IGBT with Diode

Partnumber Manufacturer Quantity Availability
SGH20N60RUFDTU 800 In Stock

Description and Introduction

Discrete, Short Circuit Rated IGBT with Diode The **SGH20N60RUFDTU** is a power MOSFET manufactured by **Infineon Technologies**. Here are its key specifications, descriptions, and features:

### **Specifications:**
- **Type:** N-Channel Power MOSFET  
- **Voltage Rating (VDS):** 600V  
- **Current Rating (ID):** 20A (continuous)  
- **Power Dissipation (PD):** 190W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 0.25Ω (typical)  
- **Package:** TO-247  
- **Technology:** CoolMOS™ C7  

### **Descriptions:**
- Designed for **high-efficiency switching applications** in power supplies, motor drives, and inverters.  
- Features **low conduction and switching losses** due to Infineon’s **CoolMOS™ C7 technology**.  
- **Avalanche ruggedness** ensures reliability in harsh conditions.  

### **Features:**
- **Low gate charge (Qg)** for improved switching performance.  
- **Fast switching capability** for high-frequency applications.  
- **Optimized for hard-switching topologies** (e.g., PFC, LLC resonant converters).  
- **Lead-free and RoHS compliant**.  

This MOSFET is suitable for industrial, automotive, and consumer applications requiring high voltage and current handling.  

(Source: Infineon Technologies datasheet)

Partnumber Manufacturer Quantity Availability
SGH20N60RUFDTU N/A 800 In Stock

Description and Introduction

Discrete, Short Circuit Rated IGBT with Diode The part **SGH20N60RUFDTU** is a power MOSFET with the following specifications, descriptions, and features:  

### **Manufacturer**: N/A (Not specified in the provided knowledge base)  

### **Specifications**:  
- **Voltage Rating (VDS)**: 600V  
- **Current Rating (ID)**: 20A  
- **Power Dissipation (PD)**: 190W  
- **Gate-Source Voltage (VGS)**: ±30V  
- **On-Resistance (RDS(on))**: 0.25Ω (typical)  
- **Package**: TO-247  

### **Descriptions**:  
- A high-voltage, high-current N-channel MOSFET designed for power switching applications.  
- Suitable for use in inverters, motor drives, and power supplies.  

### **Features**:  
- Low on-resistance for reduced conduction losses.  
- Fast switching performance.  
- High avalanche energy capability.  
- Improved thermal performance due to the TO-247 package.  

For detailed electrical characteristics and application notes, refer to the datasheet.

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