SGH20N60RUFD ,Short Circuit Rated IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGH20N60RUFDTU ,Discrete, Short Circuit Rated IGBT with DiodeApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls. C CG G ..
SGH20N60RUFDTU ,Discrete, Short Circuit Rated IGBT with DiodeElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGH23N60UFDTU ,Discrete, High Performance IGBT with DiodeFeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) UFD High Speed Switchingseries provid ..
SGH23N60UFDTU ,Discrete, High Performance IGBT with DiodeElectrical Characteristics of IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Conditions ..
SGH23N60UFDTU ,Discrete, High Performance IGBT with Diodeapplications such as motor High Input Impedancecontrol and general inverters where High Speed Swit ..
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SGH20N60RUFD
Short Circuit Rated IGBT
SGH20N60RUFD IGBT SGH20N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar • Short circuit rated 10us @ T = 100°C, V = 15V C GE Transistors (IGBTs) provide low conduction and switching • High speed switching losses as well as short circuit ruggedness. The RUFD • Low saturation voltage : V = 2.2 V @ I = 20A CE(sat) C series is designed for applications such as motor control, • High input impedance uninterrupted power supplies (UPS) and general inverters • CO-PAK, IGBT with FRD : t = 50ns (typ.) rr where short circuit ruggedness is a required feature. Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C C G G E E TO-3P G C E Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description SGH20N60RUFD Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage ± 20 V GES Collector Current @ T = 25°C32 A C I C Collector Current @ T = 100°C20 A C I Pulsed Collector Current 60 A CM (1) I Diode Continuous Forward Current @ T = 100°C25 A F C I Diode Maximum Forward Current 220 A FM T Short Circuit Withstand Time @ T = 100°C10 us SC C P Maximum Power Dissipation @ T = 25°C 195 W D C Maximum Power Dissipation @ T = 100°C75 W C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C stg Maximum Lead Temp. for Soldering T 300 °C L Purposes, 1/8” from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 0.64 °C/W θJC R (DIODE) Thermal Resistance, Junction-to-Case -- 0.83 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2002 SGH20N60RUFD Rev. B1
