SGH15N120RUFDTU ,Discrete, Short Circuit Rated IGBT with DiodeElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGH15N120RUFTU ,Discrete, Short Circuit Rated IGBTApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls. C CG G ..
SGH15N60RUFD ,Short Circuit Rated IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGH15N60RUFDTU ,Discrete, Short Circuit Rated IGBT with DiodeElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SGH15N60RUFDTU ,Discrete, Short Circuit Rated IGBT with DiodeApplicationsAC & DC motor controls, general purpose inverters, robotics, and servo controls. C CG G ..
SGH20N60RUFD ,Short Circuit Rated IGBTElectrical Characteristics of the IGBT T = 25°C unless otherwise notedCSymbol Parameter Test Condit ..
SII1161CT100 , PanelLink Receiver
SII1161CT100 , PanelLink Receiver
SII1161CT100 , PanelLink Receiver
SII1390CTU , PanelLink /HDCP Transmitters
SII1390CTU , PanelLink /HDCP Transmitters
SII3531A , PCI Express to Serial ATA Controller
SGH15N120RUFDTU
Discrete, Short Circuit Rated IGBT with Diode
SGH15N120RUFD IGBT SGH15N120RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar • Short circuit rated 10μs @ T = 100°C, V = 15V C GE Transistors (IGBTs) provides low conduction and switching • High speed switching losses as well as short circuit ruggedness. The RUFD • Low saturation voltage : V = 2.3 V @ I = 15A CE(sat) C series is designed for applications such as motor control, • High input impedance uninterrupted power supplies (UPS) and general inverters • CO-PAK, IGBT with FRD : t = 70ns (typ.) rr where short circuit ruggedness is a required feature. Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C C G G TO-3P E E G C E Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Description SGH15N120RUFD Units V Collector-Emitter Voltage 1200 V CES V Gate-Emitter Voltage ± 25 V GES Collector Current @ T = 25°C24 A C I C Collector Current @ T = 100°C15 A C I Pulsed Collector Current 45 A CM (1) I Diode Continuous Forward Current @ T = 100°C15 A F C I Diode Maximum Forward Current 90 A FM T Short Circuit Withstand Time @ T = 100°C10 μs SC C P Maximum Power Dissipation @ T = 25°C 180 W D C Maximum Power Dissipation @ T = 100°C72 W C T Operating Junction Temperature -55 to +150 °C J T Storage Temperature Range -55 to +150 °C stg Maximum Lead Temp. for soldering T 300 °C L Purposes, 1/8” from case for 5 seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 0.69 °C/W θJC R (DIODE) Thermal Resistance, Junction-to-Case -- 1.0 °C/W θJC R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2002 SGH15N120RUFD Rev. B2
