SGB15N60 ,IGBTs & DuoPacksapplications offers:- very tight parameter distribution- high ruggedness, temperature stable behavi ..
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SGBJ15K , Glass Passivated Single Phase Bridge Rectifiers
SGBJ15M , Glass Passivated Single Phase Bridge Rectifiers
SGC10JH , SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
SIHG20N50C-E3 , Power MOSFET
SIHG20N50C-E3 , Power MOSFET
SIHP18N50C-E3 , Power MOSFET
SII1161CT100 , PanelLink Receiver
SII1161CT100 , PanelLink Receiver
SII1161CT100 , PanelLink Receiver
SGB15N60 -SGW15N60
IGBTs & DuoPacks
SGP15N60,SGB15N60
SGW15N60
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 μs
• Designed for:
- Motor controls- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution- high ruggedness, temperature stable behaviour
- parallel switching capability
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum RatingsSGP15N60,SGB15N60
SGW15N60
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Dynamic CharacteristicInput capacitance
Reverse transfer capacitance
SGP15N60,SGB15N60
SGW15N60
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT CharacteristicTurn-on delay time
Rise time
Fall time
Turn-on energy
Total switching energyVCC=400V,IC=15A,1)=180nH,1)=250pFVGE=0/15V,
RG=21ΩEnergy losses include
“tail” and diode
SGP15N60,SGB15N60
SGW15N60
COLLE
OR CURRE
10Hz100Hz1kHz10kHz100kHz
10A
20A
30A
40A
50A
60A
70A
80A
COLLE
OR CURRE10V100V1000V
0.1A
10A
f, SWITCHING FREQUENCYVCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function ofswitching frequency(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 21Ω)
Figure 2. Safe operating area(D = 0, TC = 25°C, Tj ≤ 150°C)
tot
R DIS
25°C50°C75°C100°C125°C
20W
40W
60W
80W
100W
120W
140W
COLLE
OR CURRE
25°C50°C75°C100°C125°C0A
10A
15A
20A
25A
30A
TC, CASE TEMPERATURETC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature(Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature(VGE ≤ 15V, Tj ≤ 150°C)
SGP15N60,SGB15N60
SGW15N60
COLLE
OR CURRE1V2V3V4V5V
10A
15A
20A
25A
30A
35A
40A
45A
50A
COLLE
OR CURRE1V2V3V4V5V
10A
15A
20A
25A
30A
35A
40A
45A
VCE, COLLECTOR-EMITTER VOLTAGEVCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics(Tj = 25°C)
Figure 6. Typical output characteristics(Tj = 150°C)
COLLE
OR CURRE2V4V6V8V10V
10A
15A
20A
25A
30A
35A
40A
45A
50A
CE(sat)
COLLE
ITT
SATU
ATI
-50°C0°C50°C100°C150°C1.0V
1.5V
2.0V
2.5V
3.0V
3.5V
4.0V
VGE, GATE-EMITTER VOLTAGETj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics(VCE = 10V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junctiontemperature(VGE = 15V)
SGP15N60,SGB15N60
SGW15N60
ITC
TI10A15A20A25A30A10ns
100ns
ITC
TI20Ω40Ω60Ω10ns
100ns
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 9. Typical switching times as afunction of collector current(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 21Ω,Dynamic test circuit in Figure E)
Figure 10. Typical switching times as afunction of gate resistor(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 15A,Dynamic test circuit in Figure E)
CHI
0°C50°C100°C150°C10ns
100ns
GE(th)
ITT
TH
ESH
VO
-50°C0°C50°C100°C150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
Tj, JUNCTION TEMPERATURETj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 15A, RG = 21Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature(IC = 0.4mA)
