SFW9Z34TM ,60V P-Channel A-FET / Substitute of IRFW9Z34FEATURESBV = -60 VDSS! Avalanche Rugged TechnologyΩR = 0.14 DS(on) ! Rugged Gate Oxide Tech ..
SFW9Z34TM ,60V P-Channel A-FET / Substitute of IRFW9Z34SFW/I9Z34Advanced Power MOSFET
SG105 , PHOTOINTERRUPTERS
SG-105 , Photointerrupters(Reflective)
SG105F , PHOTOINTERRUPTERS
SG-105F , Photointerrupters(Reflective)
SI7366DP ,N-Channel 20-V (D-S) MOSFETS-31414—Rev. A, 07-Jul-031Si7366DPNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERW ..
SI7370DP ,N-Channel 60-V (D-S) MOSFETS-20826—Rev. A, 17-Jun-021Si7370DPNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERW ..
SI7370DP ,N-Channel 60-V (D-S) MOSFETS-20826—Rev. A, 17-Jun-023I – Source Current (A) V – Gate-to-Source Voltage (V) r – On-Resistanc ..
SI7388DP ,N-Channel Reduced Qg, Fast Switching MOSFETS-21518—Rev. B, 26-Aug-021Si7388DPNew ProductVishay SiliconixMOSFET SPECIFICATIONS (T = 25C UNLESS ..
SI7390DP ,N-Channel 30-V (D-S) Fast Switching WFETS-31728—Rev. B, 18-Aug-031Si7390DPNew ProductVishay SiliconixMOSFET SPECIFICATIONS (T = 25C UNLESS ..
SI7392ADP , N-Channel Reduced Qg, Fast Switching WFET
SFW9Z34TM
60V P-Channel A-FET
SFW/I9Z34! Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175o C Operating Temperature Lower Leakage Current : 10 μA(Max.) @ VDS = -60V Low RDS(ON) : 0.106 Ω (Typ.)
Advanced Power MOSFET
Thermal Resistance
FEATURES When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum RatingsRev. C
