SFW9520TM ,100V P-Channel A-FETFEATURESBV = -100 VDSSn Avalanche Rugged TechnologyΩR = 0.6 DS(on) n Rugged Gate Oxide Tech ..
SFW9540 ,Advanced Power MOSFETFEATURESBV = -100 VDSS Avalanche Rugged TechnologyΩR = 0.2DS(on) Rugged Gate Oxide Te ..
SFW9540TM ,100V P-Channel A-FETFEATURESBV = -100 VDSSn Avalanche Rugged TechnologyΩR = 0.2DS(on) n Rugged Gate Oxide Techn ..
SFW9624 ,Advanced Power MOSFETFEATURESBV = -250 VDSS Avalanche Rugged TechnologyR = 2.4 ΩDS(on) Rugged Gate Oxide T ..
SFW9624TM ,250V P-Channel A-FETFEATURESBV = -250 VDSS Avalanche Rugged TechnologyR = 2.4 ΩDS(on) Rugged Gate Oxide T ..
SFW9640 ,Advanced Power MOSFETSFW/I9640Advanced Power MOSFET
SI7336DP ,N-Channel 30-V (D-S) MOSFETS-32038—Rev. B, 13-Oct-03 1Si7336DPNew ProductVishay SiliconixMOSFET SPECIFICATIONS (T = 25C UNLES ..
SI7336DP-T1 ,N-Channel 30-V (D-S) MOSFETS-41795—Rev. C, 04-Oct-04 1Si7336DPVishay SiliconixMOSFET SPECIFICATIONS (T = 25C UNLESS OTHERWISE ..
SI7344DP ,N-Channel 20-V (D-S) MOSFETS-03602—Rev. A, 31-Mar-031Si7344DPNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERW ..
SI7356DP-T1 ,N-Channel 30-V (D-S) MOSFETS-32039—Rev. B, 13-Oct-03 1Si7356DPNew ProductVishay SiliconixMOSFET SPECIFICATIONS (T = 25C UNLES ..
SI7366DP ,N-Channel 20-V (D-S) MOSFETS-31414—Rev. A, 07-Jul-031Si7366DPNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERW ..
SI7370DP ,N-Channel 60-V (D-S) MOSFETS-20826—Rev. A, 17-Jun-021Si7370DPNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERW ..
SFW9520TM
100V P-Channel A-FET
SFW/I9520n Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175o C Operating Temperature Lower Leakage Current : 10 μA(Max.) @ VDS = -100V Low RDS(ON) : 0.444 Ω (Typ.)
Advanced Power MOSFET
Thermal Resistance
FEATURES When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum RatingsRev. C
