SFR9230B ,200V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -5.4A, -200V, R = 0.6Ω @V = -10 VDS(o ..
SFS2955 ,P-CHANNEL POWER MOSFETFEATURESBV = -60 VDSS! Avalanche Rugged TechnologyR = 0.3 ΩDS(on) ! Rugged Gate Oxide Techn ..
SFS9620 ,Advanced Power MOSFETFEATURESBV = -200 VDSS Avalanche Rugged TechnologyR = 1.5 ΩDS(on) Rugged Gate Oxide T ..
SFS9624 ,Advanced Power MOSFETFEATURESBV = -250 VDSS Avalanche Rugged TechnologyR = 2.4 ΩDS(on) Rugged Gate Oxide T ..
SFS9630 ,Advanced Power MOSFETFEATURESBV = -200 VDSS Avalanche Rugged TechnologyR = 0.8 ΩDS(on) Rugged Gate Oxide T ..
SFS9634 ,Advanced Power MOSFETSFS9634Advanced Power MOSFET
SI7178DP-T1-GE3 , N-Channel 100-V (D-S) MOSFET
SI7192DP , N-Channel 30-V (D-S) MOSFET
SI7200E , STEPPING MOTOR DRIVER
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SI-7200M , Bipolar Driver IC
SI7212DN-T1-E3 , Dual N-Channel 30-V (D-S) MOSFET
SFR9230B
200V P-Channel MOSFET
SFR9230B / SFU9230B November 2001 SFR9230B / SFU9230B 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -5.4A, -200V, R = 0.6Ω @V = -10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 33 nC) planar, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. S !!!!!!!! D ● ● ● ● ● ● ● ● G!!!! ● ● ● ● ● ● ● ● !!!! ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▶ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● D-PAK I-PAK GS SFR Series SFU Series GS D !!!!!!!! D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter SFR9230B / SFU9230B Units V Drain-Source Voltage -200 V DSS I - Continuous (T = 25°C) Drain Current -5.4 A D C - Continuous (T = 100°C) -3.4 A C I (Note 1) Drain Current - Pulsed -22 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 390 mJ AS I Avalanche Current (Note 1) -5.4 A AR E (Note 1) Repetitive Avalanche Energy 4.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 49 W C - Derate above 25°C 0.44 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.55 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. A, November 2001
