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SFH6943-2T-SFH6943-3T-SFH6943-4T
Low Current Input Mini Optocoupler
SFH6943
Low Current Input
Mini OptocouplerTotal Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 mW
Detector (Si Phototransistor)Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .70 V
Emitter-Collector Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 V
Collector Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Surge Collector Current (
Clearance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 . . . . . . . 175
Isolation Resistance
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . .–55 to +100
Junction Temperature
Soldering Temperature (t=10 sec. max.)
FEATURESTransistor Optocoupler in SOT223/10
PackageEnd Stackable, 1.27 mm SpacingLow Current InputVery High CTR, 150% Typical at
=1 mA,
=5 VGood CTR Linearity Versus Forward CurrentMinor CTR DegradationField Effect Stable by TRIOS
(TRansparent IOn Shield)High Collector-Emitter Voltage,
CEO
=70 VLow Coupling CapacitanceHigh Common Mode Transient ImmunityIsolation Test Voltage: 1768 V
RMS
APPLICATIONSTelecommunicationSMTPCMCIAInstrumentation
DESCRIPTIONThe SFH6943 is a four channel mini-optocoupler
suitable for high density packaged PCB applica-
tion. It has a minimum of 1768 V
RMS
isolation from
input to output. The device consists of four pho-
totransistors as detectors. Each channel is indi-
vidually controlled. The optocoupler is housed in
a SOT223/10 package. All the cathodes of the
input LEDs and all the collectors of the output
transistors are commoned enabling a pin count
reduction from 16 pins to 10 pins—a significant
space savings as compared to four channels that
are electrically isolated individually.
Figure 3. LED current versus LED
voltage
Figure 4. Non-saturated current transfernormalized to
=1 mA, NCTR=f(
Figure 5. Transistor capacitance
(typ.)=25
C, f=1MHz,
=f(
Figure 6. Collector-emitter leakage
current (typ.) IF=0, TA=25°C, ICEO=f(VCE)
current diode I=f(T=25°C)
dissipation Ptot=f(TA)
Figure 9. TA=25°C, IF=1 mA, VCC=5 V, ton, tr, toff,tt=f(RL)
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