SDT08S60 ,Silicon Carbide Schottky DiodesSDT08S60 SDT08S60Silicon Carbide Schottky Diode thinQ! SiC Schottky Diode• Worlds first 600V Schot ..
SDT-1205P-100-122 , SMD POWER INDUCTORS
SDT12S60 ,Silicon Carbide Schottky DiodesPreliminary dataSDT12S60 SDT12S60Silicon Carbide Schottky Diode
SDT08S60
Silicon Carbide Schottky Diodes
SDT08S60SDT08S60
thinQ! SiC Schottky DiodeSilicon Carbide Schottky Diode• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• No forward recovery
Product SummaryP-TO220-2-2.
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
SDT08S60SDT08S60
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
SDT08S60SDT08S60
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
AC Characteristics
SDT08S60SDT08S60
1 Power dissipationtot = f (TC)
10
15
20
25
30
35
40
45
50
55
60
SDT08S60
tot
2 Diode forward current F= f (TC)
parameter: Tj≤175 °C
4 Typ. forward power dissipation vs.
average forward current F(AV)=f(IF) TC=100°C, d = tp/T
12
16
20
24
28
36
F(AV)
3 Typ. forward characteristic F = f (VF)
parameter: T
10
12
16
SDT08S60SDT08S60
5 Typ. reverse current vs. reverse voltageR=f(VR)
-3 10
-2 10
-1 10 10 10 10
6 Transient thermal impedance thJC = f (tp)
parameter : D = tp/T
10 0
-5 10
-4 10
-3 10
-2 10
-1 10 10
SDT08S60
thJC
7 Typ. capacitance vs. reverse voltage C= f(VR)
parameter: TC = 25 °C, f = 1 MHz
20
40
60
80
100
120
140
160
180
200
220
240
8 Typ. C stored energy C=f(VR)
0.5
1.5
2.5
3.5
SDT08S60SDT08S60c=f(diF/dt)
parameter: Tj = 150 °C
10
15
20
25
35
