Home ›  S › S18 > SDT04S60 ,Silicon Carbide Schottky Diodes

SDT04S60 Fast Delivery,Good Price
Part Number:

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
SDT04S60 |SDT04S60	Infineon	N/a	6000	avai	Silicon Carbide Schottky Diodes

SDT04S60 ,Silicon Carbide Schottky DiodesSDP04S60, SDD04S60Final dataSDT04S60Silicon Carbide Schottky Diode• Worlds first 600V Schottky diod ..
SDT05S , TVS Diode
SDT06S60 ,Silicon Carbide Schottky DiodesSDP06S60, SDB06S60SDT06S60Silicon Carbide Schottky Diode thinQ! SiC Schottky Diode• Worlds first 6 ..
SDT08S60 ,Silicon Carbide Schottky DiodesSDT08S60 SDT08S60Silicon Carbide Schottky Diode thinQ! SiC Schottky Diode• Worlds first 600V Schot ..
SDT-1205P-100-122 , SMD POWER INDUCTORS
SDT12S60 ,Silicon Carbide Schottky DiodesPreliminary dataSDT12S60 SDT12S60Silicon Carbide Schottky Diode

---

SDT04S60
Silicon Carbide Schottky Diodes
SDP04S60, SDD04S60
SDT04S60Final data
Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• Ideal diode for Power Factor
Correction up to 800W1)
• No forward recovery
Product Summary
P-TO220-2-2.P-TO252-3-1.P-TO220-3-1.
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
SDP04S60, SDD04S60
SDT04S60Final data
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static CharacteristicsCCM, VIN= 85VAC, Tj = 150°C, TC =100°C, η = 93%, ∆ IIN = 30%
SDP04S60, SDD04S60
SDT04S60Final data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
AC Characteristics
SDP04S60, SDD04S60
SDT04S60Final data
1 Power dissipation tot = f (TC)
10
15
20
25
30
40
tot
2 Diode forward current F= f (TC)
parameter: Tj≤175 °C
0.5
1.5
2.5
3.5
4.5
4 Typ. forward power dissipation vs.
average forward current F(AV)=f(IF) TC=100°C, d = tp/T
10
12
14
18
F(AV)
3 Typ. forward characteristic F = f (VF)
parameter: T
SDP04S60, SDD04S60
SDT04S60Final data
5 Typ. reverse current vs. reverse voltageR=f(VR)
-3 10
-2 10
-1 10 10 10 10
6 Transient thermal impedance thJC = f (tp)
parameter : D = tp/T
10 0
-4 10
-3 10
-2 10
-1 10 10 10
thJC
8 Typ. C stored energy C=f(VR)
0.2
0.4
0.6
0.8
1.2
1.4
1.6
7 Typ. capacitance vs. reverse voltage
C= f(VR)
parameter: TC = 25 °C, f = 1 MHz
25
50
75
125
SDP04S60, SDD04S60
SDT04S60Final datac=f(diF/dt)
parameter: Tj = 150 °C
10
14

TEL:86-533-2716050      FAX:86-533-2716790     ©2020 IC PHOENIX CO.,LIMITED