SDP10S30 ,Silicon Carbide Schottky DiodesSDP10S30, SDB10S30Preliminary dataSDT10S30Silicon Carbide Schottky Diode
SDP10S30
Silicon Carbide Schottky Diodes
SDP10S30, SDB10S30
SDT10S30Preliminary data
Silicon Carbide Schottky Diode Revolutionary semiconductor
material - Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on
the switching behavior No forward recovery
Product SummaryP-TO220-2-2.P-TO220-3-1.P-TO220-3.SMD
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
SDP10S30, SDB10S30
SDT10S30Preliminary data
Thermal Characteristics
Characteristics
Static CharacteristicsDevice on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
SDP10S30, SDB10S30
SDT10S30Preliminary data
AC Characteristics
SDP10S30, SDB10S30
SDT10S30Preliminary data
1 Power dissipation tot = f (TC)
10
15
20
25
30
35
40
45
50
55
60
tot
2 Diode forward current F= f (TC)
parameter: Tj175 °C
11
4 Typ. forward power dissipation vs.
average forward current F(AV)=f(IF) TC=100°C, d = tp/T
12
16
20
24
32
F(AV)
3 Typ. forward characteristic F = f (VF)
parameter: T , tp = 350 µs
10
12
14
16
20
SDP10S30, SDB10S30
SDT10S30Preliminary data
5 Typ. reverse current vs. reverse voltageR=f(VR)
-4 10
-3 10
-2 10
-1 10 10 10
6 Transient thermal impedance thJC = f (tp)
parameter : D = tp/T
10 0
-4 10
-3 10
-2 10
-1 10 10 10
thJC
7 Typ. capacitance vs. reverse voltage C= f(VR)
parameter: TC = 25 °C, f = 1 MHz
50
100
150
200
250
300
350
450
8 Typ. C stored energy C=f(VR)
0.5
1.5
2.5
SDP10S30, SDB10S30
SDT10S30Preliminary datac=f(diF/dt)
parameter: Tj = 150 °C
10
12
14
16
18
22
