SDB06S60 ,600V Silicon Carbide Ultrafast Schottky DiodeSDP06S60, SDB06S60SDT06S60Silicon Carbide Schottky Diode thinQ! SiC Schottky Diode• Worlds first 6 ..
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SDB06S60
600V Silicon Carbide Ultrafast Schottky Diode
SDP06S60, SDB06S60
SDT06S60
thinQ! SiC Schottky DiodeSilicon Carbide Schottky Diode• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• Ideal diode for Power Factor
Correction up to 1200W1)
• No forward recovery
Product SummaryP-TO220-2-2.P-TO220-3-1.P-TO220-3.SMD
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
SDP06S60, SDB06S60
SDT06S60
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static CharacteristicsCCM, VIN= 85VAC, Tj = 150°C, TC =100°C, η = 93%, ∆ IIN = 30%
SDP06S60, SDB06S60
SDT06S60
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
AC Characteristics
SDP06S60, SDB06S60
SDT06S60
1 Power dissipation tot = f (TC)
10
15
20
25
30
35
40
45
50
tot
2 Diode forward current F= f (TC)
parameter: Tj≤175 °C
0.5
1.5
2.5
3.5
4.5
5.5
4 Typ. forward power dissipation vs.
average forward current F(AV)=f(IF) TC=100°C, d = tp/T
10
12
14
16
18
20
22
24
F(AV)
3 Typ. forward characteristic F = f (VF)
parameter: T
10
SDP06S60, SDB06S60
SDT06S60
5 Typ. reverse current vs. reverse voltageR=f(VR)
-3 10
-2 10
-1 10 10 10 10
6 Transient thermal impedance thJC = f (tp)
parameter : D = tp/T
10 0
-4 10
-3 10
-2 10
-1 10 10 10
thJC
7 Typ. capacitance vs. reverse voltage C= f(VR)
parameter: TC = 25 °C, f = 1 MHz
50
100
150
250
8 Typ. C stored energy C=f(VR)
0.5
1.5
2.5
3.5
SDP06S60, SDB06S60
SDT06S60c=f(diF/dt)
parameter: Tj = 150 °C
10
12
14
16
18
22
