SD51 ,High Power Schottky RectifiersFeaturesThe SD51 Schottky rectifier has been optimized for very lowCharacteristics SD51... Unitsfo ..
SD520 , TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE - 20 to 100 Volts
SD520E , 5-CHANNEL DIFFERENTIAL 10:20 MULTIPLEXER SWITCH FOR DVI/HDMI APPLICATIONS
SD52-220 , High Power Density, Low Profile, Shielded Inductors
SD52-4R7 , High Power Density, Low Profile, Shielded Inductors
SD52-4R7 , High Power Density, Low Profile, Shielded Inductors
SGL41-40 ,Surface Mount Schottky Rectifier Forward Current 1.0A11-Feb-02 1BYM13-20 thru BYM13-60, SGL41-20 thru SGL41-60Vishay Semiconductorsformerly General Semi ..
SGM2013-3.3XK3L , 300mA, Low Power, Low Dropout, 3 -Terminal, Linear Regulators
SGM2014M , GaAs N-channel Dual Gate MES FET
SGM2016M , GaAs N-channel Dual-Gate MES FET
SGM2022 , Dual, Low Dropout, 150mA RF - Linear Regulators
SGM2358YS , 1MHz, General Purpose CMOS Operational Amplifier
SD51
High Power Schottky Rectifiers
International
122R Rectifier
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Bulletin PD-2.327 rev.C 11/02
TO-203AB (00-5)
Description/ Features
(0.44)
254 (1) MAX‘
09 (O 03)
C) 84) /
4 (016)
10 8 (0 4B)
114 (045)
1/4" 28
For metric
. . . The SD51 Schottky rectifier has been optimized forvery low
Characteristics SDM... Units forward voltage drop, with moderate leakage. The propri-
etary barrier technology allows for reliable operation up to
IHAV) Rectangular 60 A 150° C junction temperature. Typical applications are in
waveform switching power supplies, converters, free-wheeling diodes,
and reverse battery protection.
VRRM 45 V
. 150° C TJ operation
IFSM @60Hz 800 A . Very low forward voltage drop
. High frequency operation
VF @120Apk’Tf 150 C 0.75 V . Guard ring for enhanced ruggedness and long term
reliability
T J -65to 150 "C . Hermetic packaging
a 15 (059)
(O P7)
4 (016) MIN
UNF-PA
devwces M6 x 1
g Conforms to JEDEC Outline DO-203AB (00.5)
Dimensions in millimeters and (inches)
Bulletin PD-2.327 rev.C 11102
International
IEER Rectifier
Voltage Ratings
Part number SD51
VR Max. DC Reverse Voltage (V)
. 45 (1)
VRWM Max. Working Peak Reverse Voltage (V)
(1) For SD51 a,, and vRRM = MN @ T J = 25°C , =35V @ T J = 150°C
Absolute Maximum Ratings
Parameters SD51 Units Conditions
IFW) Max. Average Forward Current 60 A 50% duty cycle @ TC = 90''C, rectangularwave form
*See Fig. 5
|FSM Max. PeakOne Cycle Non-Repetitive 800 A 60Hz halfcyclesinewave 2lttl/gtg, rateéj
* . oa con I Ion an
Surge Current See Fig. 7 or5ms rectangularpulse with rated VRRM applied
Electrical Specifications
Parameters SD51 Units Conditions
VFM Max. Forward Voltage Drop (2) 0.58 V @ 35A
* See Fig. 1 0.66 V @ 60A TJ = 25 '"C
0.86 V @ 120A
0.75 V @120A TJ=150°C
|RM Max. Reverse Leakage Current (2) 50 mA T J = 25 "C
VR = rated VR
* See Fig. 2 200 mA TJ = 125 "C
c, Max. Junction Capacitance 2900 pF VR = SVDC. (test signal range 100Khz to 1Mhz) 25 ''C
LS Typical Series Inductance 7.5 nH Measured from top of terminal to mounting plane
dv/dt Max. Voltage Rate of Change 10000 VI us
(Rated VR)
(2) Pulse VWdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters SD51 Units Conditions
T J Max. Junction Temperature Range -6510150 "C
stg Max. StorageTemperature Range -65to150 ''C
mm Max. ThermalResistanceJunction 1.0 "CAN DCoperation *See Fig.4
to Case
Rmcs TypicalThermalResistance,Caseto 0.25 "CIW Mounting surface,smoothand greased
Heatsink
wt Approximate Weight 15 (0.53) g (oz.)
T Mounting Torque Min. 23 (20) Kg-cm Non-Iubricatedthreads
Max. 46 (40) (Ibf-in)
CaseStyle DO-203AB(DO-5 JEDEC
* For Additional Informations and Graphs, Please See the 50HQ Series
