SB29003TF ,High Voltage TransistorSB29003 High Voltage TransistorSB29003High Voltage Transistor1SOT-223Marking: 54630031.Base 2.C ..
SB29003TF_NL ,High Voltage TransistorSB29003 High Voltage TransistorSB29003High Voltage Transistor1SOT-223Marking: 54630031.Base 2.C ..
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SB2H100-E3-73 , High-Voltage Schottky Rectifier
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SB30-03P ,Sillicon Epitaxial Schottky Barrier Diode 30V, 3A RectifierAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniRV epetitive Peak ..
SCE5782 , Serial Input Dot Addressable Intelligent Display® Devices
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SCF5249VM140 , Integrated ColdFire Microprocessor
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SCF6C60 , Silicon Controlled Rectifiers
SB29003-SB29003TF-SB29003TF_NL
High Voltage Transistor
SB29003 High Voltage Transistor SB29003 High Voltage Transistor 1 SOT-223 Marking: 5463003 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings T = 25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 300 mA C P Collector Dissipation (T = 25°C) 2 W C C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T = 25°C unless otherwise noted C Symbol Parameter Conditions Min. Max Units BV Collector-Base Breakdown Voltage I = 100μA, I = 0 500 V CBO C B BV Collector-Emitter Breakdown Voltage * I = 1mA, I = 0 400 V CER C B BV Emitter-Base Breakdown Voltage I = 100μA, I = 0 6 V EBO E C I Collector Cut-off Current V = 400V, I = 0 0.1 μA CBO CB E I Collector Cut-off Current V = 400V, I = 0 0.5 μA CES CE B I Emitter Cut-off Current V = 4V, I = 0 0.1 μA EBO EB C h DC Current Gain * V = 10V, I = 1mA 40 FE CE C V = 10V, I = 10mA 50 200 CE C V = 10V, I = 50mA 45 CE C V = 10V, I = 100mA 40 CE C V Collector-Emitter Saturation Voltage * I = 1mA, I = 0.1mA 0.4 V CE(sat) C B I = 10mA, I = 1mA 0.5 V C B I = 50mA, I = 5mA 0.75 V C B V Base-Emitter Saturation Voltage * I = 10mA, I = 1mA 0.75 V BE(sat) C B C Output Capatitance V = 20V, I = 0, f = 1MHz 7 pF ob CB E * Pulse Test: PW ≤ 300μs, Duty Cycle ≤ 2% ©2004 1 SB29003 Rev. A
