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SA630-SA630D-SA630N
Single pole double throw (SPDT) switch
Philips Semiconductors
Product Specification
Replaces data of October 10, 1991 1997 Nov 07
IC17 Data Handbook
Philips Semiconductors Product specification
SA630Single pole double throw (SPDT) switch
DESCRIPTIONThe SA630 is a wideband RF switch fabricated in BiCMOS technol-
ogy and incorporating on-chip CMOS/TTL compatible drivers. Its
primary function is to switch signals in the frequency range DC -
1GHz from one 50Ω channel to another. The switch is activated by
a CMOS/TTL compatible signal applied to the enable channel 1 pin
(ENCH1).
The extremely low current consumption makes the SA630 ideal for
portable applications. The excellent isolation and low loss makes
this a suitable replacement for PIN diodes.
The SA630 is available in an 8-pin dual in-line plastic package and
an 8-pin SO (surface mounted miniature) package.
FEATURES•Wideband (DC - 1GHz)
•Low through loss (1dB typical at 200MHz)
•Unused input is terminated internally in 50Ω
•Excellent overload capability (1dB gain compression point +18dBm
at 300MHz)
•Low DC power (170μA from 5V supply)
•Fast switching (20ns typical)
•Good isolation (off channel isolation 60dB at 100MHz)
PIN CONFIGURATION
Figure 1. Pin Configuration•Low distortion (IP3 intercept +33dBm)
•Good 50Ω match (return loss 18dB at 400MHz)
•Full ESD protection
•Bidirectional operation
APPLICATIONS•Digital transceiver front-end switch
•Antenna switch
•Filter selection
•Video switch
•FSK transmitter
ORDERING INFORMATION
BLOCK DIAGRAM
Figure 2. Block Diagram
RECOMMENDED OPERATING CONDITIONS
Philips Semiconductors Product specification
SA630Single pole double throw (SPDT) switch
EQUIVALENT CIRCUIT
Figure 3. Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS
NOTES: Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, θJA:
8-Pin DIP: θJA = 108°C/W
8-Pin SO: θJA = 158°C/W
DC ELECTRICAL CHARACTERISTICSVDD = +5V, TA = 25°C; unless otherwise stated.
NOTE: The ENCH1 input must be connected to a valid Logic Level for proper operation of the SA630.
Philips Semiconductors Product specification
SA630Single pole double throw (SPDT) switch
AC ELECTRICAL CHARACTERISTICS1 - D PACKAGEVDD = +5V, TA = 25°C; unless otherwise stated.
NOTE: All measurements include the effects of the D package SA630 Evaluation Board (see Figure 4B). Measurement system impedance is 50Ω. The placement of the AC bypass capacitor is critical to achieve these specifications. See the applications section for more details.
AC ELECTRICAL CHARACTERISTICS1 - N PACKAGEVDD = +5V, TA = 25°C; all other characteristics similar to the D-Package, unless otherwise stated.
NOTE: All measurements include the effects of the N package SA630 Evaluation Board (see Figure 4C). Measurement system impedance is 50Ω.
APPLICATIONSThe typical applications schematic and printed circuit board layout of
the SA630 evaluation board is shown in Figure 4. The layout of the
board is simple, but a few cautions need to be observed. The input
and output traces should be 50Ω. The placement of the AC bypass
capacitor is extremely critical if a symmetric isolation between the
should be placed straight down as close to the device as practical.
For better isolation between the two channels at higher frequencies,
it is also advisable to run the two output/input traces at an angle.
This also minimizes any inductive coupling between the two traces.
The power supply bypass capacitor should be placed close to the
device. Figure 10 shows the frequency response of the SA630.
The loss matching between the two channels is excellent to 1.2GHz
Philips Semiconductors Product specification
SA630Single pole double throw (SPDT) switch
Philips Semiconductors Product specification
SA630Single pole double throw (SPDT) switch
The isolation and matching of the two channels over frequency is
shown in Figures 15 and 17, respectively.
The SA630 is a very versatile part and can be used in many
applications. Figure 5 shows a block diagram of a typical Digital RF
transceiver front-end. In this application the SA630 replaces the
duplexer which is typically very bulky and lossy. Due to the low
power consumption of the device, it is ideally suited for handheld
applications such as in CT2 cordless telephones. The SA630 can
also be used to generate Amplitude Shift Keying (ASK) or On-Off
Keying (OOK) and Frequency Shift Keying (FSK) signals for digital
RF communications systems. Block diagrams for these applications
are shown in Figures 6 and 7, respectively.
For applications that require a higher isolation at 1GHz than
obtained from a single SA630, several SA630s can be cascaded as
shown in Figure 8. The cascaded configuration will have a higher
loss but greater than 35dB of isolation at 1GHz and greater than
65dB @ 500MHz can be obtained from this configuration. By
modifying the enable control, an RF multiplexer/ de-multiplexer or
antenna selector can be constructed. The simplicity of SA630
coupled with its ease of use and high performance lends itself to
many innovative applications.
The SA630 switch terminates the OFF channel in 50Ω. The 50Ω
resistor is internal and is in series with the external AC bypass
capacitor. Matching to impedances other than 50Ω can be achieved
by adding a resistor in series with the AC bypass capacitor (e.g.,
25Ω additional to match to a 75Ω environment).
Figure 5. A Typical TDMA/Digital RF Transceiver System Front-End
Figure 6. Amplitude Shift Keying (ASK) Generator
Figure 7. Frequency Shift Keying (FSK) Gnerator
Figure 8.
Philips Semiconductors Product specification
SA630Single pole double throw (SPDT) switch
Figure 9. Supply Current vs. VDD and Temperature
Figure 10. Loss vs. Frequency and VDD for D-Package
Figure 11. Loss vs. Frequency and VDD for
D-Package-Expanded Detail-
Figure 12. Loss Matching vs. Frequency for N-Package (DIP)
