S5295G ,Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)Applications (fast recovery) Unit: mm Average Forward Current: I = 0.5 A (Ta = 50°C) F (AV) ..
S5295G ,Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)Applications (fast recovery) Unit: mm Average Forward Current: I = 0.5 A (Ta = 50°C) F (AV) ..
S5295J ,Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B, S5295G, S5295J ..
S5389 , T1/CEPT/ISDN-PRI TRANSFORMER
S553-0013-00 , SURFACE MOUNT T1 CARRIER INTERFACE TRANSFORMERS T1/CEPT Telecom Line Interface Applications
S553-0013-02 , SURFACE MOUNT T1 CARRIER INTERFACE TRANSFORMERS T1/CEPT Telecom Line Interface Applications
SA8507S ,stock - COMPANDER
SA8507S ,stock - COMPANDER
SA851 , Low voltage fast-switching NPN power transistor
SA90-0001TR ,1.94-2.24 GHz, vector modulator
SA90A ,500 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORSELECTRICAL CHARACTERISTICS (T = 25°C unlessAIotherwise noted, V = 3.5 V Max. @ I (Note 6) = 35 A)F ..
SA90A ,500 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS
S5295G-S5295J
Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)
S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type
S5295B, S5295G, S5295J High Speed Rectifier Applications (fast recovery) Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V Reverse Recovery Time: 1.5 µs Plastic Mold Type.
Maximum Ratings
Electrical Characteristics (Ta ��� � 25°C) Vfr IF � 100 mA, tr � 100 ns, tw � 5 �s
Note1: Soldering: 5 mm is the minimum to be kept between case and soldering part.
Note2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire.
Unit: mm
Weight: 0.42 g (typ.)
