S1210MH ,SCRapplications.
ABSOLUTE RATINGS (limiting values)
_
|T(RM S) RMS on-state current Ttr-- 90°C
..
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S8050-C , NPN Silicon Transistors
S8050-C , NPN Silicon Transistors
S8050LT1 , PLASTIC-ENCAPSULATE TRANSISTORS
S8050LT1 , PLASTIC-ENCAPSULATE TRANSISTORS
S8050LT1 , PLASTIC-ENCAPSULATE TRANSISTORS
S1210MH
SCR
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S12xxxH
FEATURES
n IrtnMs) = 12A
It VDRM = 200V to 800V
a High surge current capability
DESCRIPTION
The S12xxxH series of SCRs uses a high
performance MESA GLASS PNPN technology.
These parts are intended for general purpose
non-insulated
applications. (Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
IT(RM S) RMS on-state current Tty-- 9tPC 12 A
(180° conduction angle)
|T(AV) Average on-state current Tc= 90°C 7.6 A
(180° conduction angle)
ITSM Non repetitive surge peak on-state current tp = 8.3 ms 132 A
(T, initial = 25°C )
tp = 10 ms 120
lzt lat Value for fusing tp = 10 ms 72 A25
dl/dt Critical rate of rise of on-state current 100 Alps
la =100mA die/dt=1A/ys.
Tstg Storage and operating junction temperature range - 40, + 150 °C
T; - 40, + 125
TI Maximum lead temperature for soldering during 10s at 260 oti1
4.5mm from case
Voltage .
Symbol Parameter Unit
B D M N
VDRM Repetitive peak off-state voltage 200 400 600 800 V
VRRM Tj = 125°C
January 1995 1/5
S12xxxH
THERMAL RESISTANCES
Symbol Parameter Value Unit
Flth(j-a) Junction to ambient 60 °C/W
RthU-c) Junction to case for DC 3 °C/W
GATE CHARACTERISTICS (maximum values)
pat/wr-IIN PeM=10W(tp.--20ys) ksMr--4A(tp=20gs)
ELECTRICAL CHARACTERISTICS
Sensitivity
Symbol Test Conditions Unit
06 10 "
ier VD=12V (DC) RL=339 Tj= 25°C MIN 0.5 10 4 mA
MAX 5 25 15
l/tar Vo=12V (DC) RL=33Q Ti--- 25°C MAX 1.5
Yao VD=VDHM RL=3.3kn Tj= 125°C MIN 0.2 V
tgt VD=VDRM ITM.--.. 3 x h(Av) Tl--. 25°C TYP 2 us
dle/dt = 0.5A/ps le = 40mA
IH 17: 250mA Gate open Tj= 25°C MAX 15 50 30 mA
IL 16:12 la Tj= 25°C MAX 30 100 60 mA
VTM h’M= 24A tp--- 380ps Tj= 25% MAX 1.6 V
IDRM VD = VDRM Tj= 25°C MAX 5
IRRM Vn = VRRM .
Tj= 110°C MAX 1.5 mA
dV/dt VD=67%VDF1M Tj= 110°C MIN 200 100 V/ws
Gate open
Tj=110°C TYP 10
tq W: 3 x |T(AV) Vn=35V Tr-.. 110°C MAX 100 us
dl/dt=10A4ls tp=100ps
dV/dt=5Vhs
VD= 67%VDRM
ORDERING INFORMATION
J l --
SCR MESA GLASS l PACKAGE :
l, H = T0220 Non-insulated
CURRENT SENsmvrrY VOLTAGE
2/5 Cn"r"k' 41102180
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