RN6006 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of part ..
RN731VTE-17 , PIN diode
RN739D , PIN diode
RN739D , PIN diode
RN739D , PIN diode
RN739F , PIN diode
RURP30120 ,30A, 1200V Ultrafast DiodeFeaturesThe RURP30120 is an ultrafast diode with soft recovery • Ultrafast with Soft Recovery. . . ..
RURP3020 ,30A/ 200V Ultrafast DiodeFeaturesThe RURP3020 is an ultrafast diode (t < 45ns) with soft• Ultrafast with Soft Recovery . . . ..
RURP3020 ,30A/ 200V Ultrafast DiodeRURP3020Data Sheet January 2000 File Number 2777.530A, 200V Ultrafast Diode
RURP3060 ,30A, 600V Ultrafast DiodeFeaturesThe RURP3060 is an ultrafast diode (t < 55ns) with soft • Ultrafast with Soft Recovery. . . ..
RURP8100 ,8A/ 1000V Ultrafast DiodesFeaturesThe MUR8100E and RUR8100 are ultrafast diodes• Ultrafast with Soft Recovery . . . . . . . . ..
RURP8100 ,8A/ 1000V Ultrafast Diodes
RN6006
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications
RN6006 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN6006 Motor Drive Circuit Applications
Power Amplifier Applications
Power Switching Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Small flat package PC = 1~2W (mounted on ceramic substrate) Complementary to RN5006
Equivalent Circuit
Maximum Ratings (Ta = 25��� �C)
Marking Tstg −55~150
Note: Pulse width� 10ms, duty cycle� 30 � : Mounterd on ceramic substrate (250mm2 � 0.8t)
Unit: mm
Weight: 0.05g (typ.)
