RN4612 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications Unit in mm Includeing two devices in SM6 (super mini type with 6 leads) With bui ..
RN46A1 ,Transistor Silicon PNP ?NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications. Two devices are incorporated into an Super-Mini (6 pin) package. Incorporati ..
RN47A2 ,Transistor Silicon NPN ?PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications. Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. Inco ..
RN47A2JE ,Bias resistor built-in transistor (BRT), 2-in-1Electrical Characteristics (Ta = 25°C) (Q1) Characteristics Symbol Test Condition Min Typ. MaxUnitI ..
RN47A3 ,Transistor Silicon NPN ?PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Electrical Characteristics (Ta 25°C) (Q1)Characteristics Symbol Test Condition Min Typ. MaxUn ..
RN47A3JE ,Bias resistor built-in transistor (BRT), 2-in-1Electrical Characteristics (Ta = 25°C) (Q1) Characteristics Symbol Test Condition Min Typ. MaxUnitI ..
RTQ020N03 , 2.5V Drive Nch MOS FET
RTQ030P02 , DC-DC Converter (-20V, -3.0A)
RTQ030P02 , DC-DC Converter (-20V, -3.0A)
RTQ030P02TR , DC-DC Converter (-20V, -3.0A)
RTQ035N03 , 2.5V Drive Nch MOS FET
RTQ035P02 TR , DC-DC Converter (−20V, −3.5A)
RN4612
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN4612
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4612 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Includeing two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values R1: 22kΩ (Q1, Q2 Common)
Q1 Maximum Ratings (Ta = 25����C)
Q2 Maximum Ratings (Ta = 25����C) Rating IC 100
Weight: 0.015g
Unit in mm
