RN2111F ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit ApplicationsApplications Unit : mm With built-in bias resistors Simplify circuit design Reduce a quantit ..
RN2112 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit ApplicationsRN2112,RN2113 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2112,RN2113 Switchin ..
RN2112MFV ,Bias resistor built-in transistor (BRT)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
RN2113 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of par ..
RN2113 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of par ..
RN2113FT ,Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications. Unit: mm High-density mount is possible because of devices housed in very thin T ..
RTL8201CP-VD , SINGLE-CHIP/SINGLE-PORT 10/100M FAST ETHERNET PHYCEIVER (With Auto Crossover)
RTM002P02 , 2.5V Drive Pch MOS FET
RTM002P02 T2L , 2.5V Drive Pch MOS FET
RTM002P02T2L , 2.5V Drive Pch MOS FET
RTQ020N03 , 2.5V Drive Nch MOS FET
RTQ030P02 , DC-DC Converter (-20V, -3.0A)
RN2110F-RN2111F
Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2110F ,RN2111F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN21 10F ,RN211 1F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110F, RN1111F
Equivalent Circuit
Maximum Ratings (Ta = 25°C) Tstg −55~150 °C
Weight : 2.3mg
Unit : mm
000707EAA1
