RN2107MFV ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C) Weight: 0.0015 g (typ.) Characteristic Symbol Rating Unit Coll ..
RN2108 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of par ..
RN2109 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit ApplicationsRN2107RN2109 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107,RN2108,RN2109 S ..
RN2109F ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit ApplicationsApplications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quant ..
RN2109MFV ,Bias resistor built-in transistor (BRT)Applications Unit: mm z Ultra-small package, suited to very high density mounting 1.2±0.05z Incor ..
RN2110 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit and Driver Circuit ApplicationsApplications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity ..
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RN2107MFV-RN2109MFV
Bias resistor built-in transistor (BRT)
RN2107MFV∼RN2109MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2107MFV , RN2108MFV , RN2109MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so
enabling the manufacture of ever more compact equipment and lowering
assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN1107MFV~RN1109MFV
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Weight: 0.0015 g (typ.)
1.15
