RN1963FS ,Bias resistor built-in transistor (BRT), 2-in-1Applications 1.0±0.05 0.8±0.05 0.1±0.050.1±0.05 • Two devices are incorporated into a fine pitch S ..
RN1964 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1961~RN1966 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1961,RN1962,RN1963 RN1 ..
RN1964FE ,Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications. Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. In ..
RN1965 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias ..
RN1966FE ,Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.RN1961FE~RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor buil ..
RN1966FS ,Bias resistor built-in transistor (BRT), 2-in-1absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
RTL8201 , REALTEK SINGLE CHIP SINGLE PORT 10/100M FAST ETHERNET PHYCEIVER RTL8201BL
RTL8201CP-VD , SINGLE-CHIP/SINGLE-PORT 10/100M FAST ETHERNET PHYCEIVER (With Auto Crossover)
RTM002P02 , 2.5V Drive Pch MOS FET
RTM002P02 T2L , 2.5V Drive Pch MOS FET
RTM002P02T2L , 2.5V Drive Pch MOS FET
RTQ020N03 , 2.5V Drive Nch MOS FET
RN1962FS-RN1963FS-RN1966FS
Bias resistor built-in transistor (BRT), 2-in-1
RN1961FS~RN1966FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1961FS,RN1962FS,RN1963FS RN1964FS,RN1965FS,RN1966FS Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications Two devices are incorporated into a fine pitch Small Mold (6 pin)
package. Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost. Complementary to RN2961FS~RN2966FS
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
Weight: 0.001 g (typ.)
Equivalent Circuit (top view) R1
R2 5 4
1 2 3
