RN1911AFS ,Bias resistor built-in transistor (BRT), 2-in-1Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) JEITA ― Characteristic Symbol Rating Unit TOSH ..
RN1911FE ,Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications. Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Inc ..
RN1911FS ,Bias resistor built-in transistor (BRT), 2-in-1Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Test Condition Min T ..
RN1961FE ,Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.RN1961FE~RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor buil ..
RN1962 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias ..
RN1962FE ,Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications. Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. In ..
RTL8201 , REALTEK SINGLE CHIP SINGLE PORT 10/100M FAST ETHERNET PHYCEIVER RTL8201BL
RTL8201CP-VD , SINGLE-CHIP/SINGLE-PORT 10/100M FAST ETHERNET PHYCEIVER (With Auto Crossover)
RTM002P02 , 2.5V Drive Pch MOS FET
RTM002P02 T2L , 2.5V Drive Pch MOS FET
RTM002P02T2L , 2.5V Drive Pch MOS FET
RTQ020N03 , 2.5V Drive Nch MOS FET
RN1910AFS-RN1911AFS
Bias resistor built-in transistor (BRT), 2-in-1
RN1910AFS, RN1911AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN1910AFS, RN1911AFS Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications • Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package. Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly costs. Complementary to the RN2910AFS/RN2911AFS
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Unit: mm
Weight: 0.001 g (typ.) 5 4
12 3
R1
