RN1310 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1310,RN1311 Unit: mmS ..
RN1311 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of part ..
RN1311 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of part ..
RN1312 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of par ..
RN1313 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1312,RN1313 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1312,RN1313 Switchin ..
RN1314 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of par ..
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RN1310-RN1311
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1310,RN1311
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1310,RN131 1 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2310, RN2311
Equivalent Circuit
Maximum Ratings (Ta = 25°C) Tstg −55~150 °C
Electrical Characteristics (Ta = 25°C) ―� ―�
Weight: 0.006g
Unit: mm
