RN1130MFV ,Bias resistor built-in transistor (BRT)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MinTyp. Max Unit I V = ..
RN1131MFV ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C) Characterisstic Symbol Rating Unit Land Pattern Example Collec ..
RN1201 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors. Simplify circuit design Reduce a quantity of pa ..
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RN1130MFV
Bias resistor built-in transistor (BRT)
RN1130MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1 130MFV Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2130MFV
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm)
Land Pattern Example (unit: mm) Weight: 1.5 mg (typ.)
Unit: mm
0.45
