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RN1116MFV-RN1117MFV-RN1118MFV
Bias resistor built-in transistor (BRT)
RN1114MFV∼RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1114MFV , RN1115MFV , RN1116MFV , RN1117MFV, RN1118MFV Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2114MFV to RN2118MFV
Equivalent Circuit and Bias Resister Values
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm)
Weight: 1.5 mg (typ.)
Unit: mm
Land Pattern Example
