RN1116 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors. Simplify circuit design Reduce a quantity of pa ..
RN1116MFV ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage RN111 ..
RN1117 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors. Simplify circuit design Reduce a quantity of pa ..
RN1117MFV ,Bias resistor built-in transistor (BRT)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
RN1118MFV ,Bias resistor built-in transistor (BRT)Applications z With built-in bias resistors 11z Simplify circuit design z Reduce a quantity of pa ..
RN1130MFV ,Bias resistor built-in transistor (BRT)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MinTyp. Max Unit I V = ..
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RN1114-RN1115-RN1116-RN1117
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1114~RN1118
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1114,RN1115,RN1116,RN1117,RN1118 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2114~2118
Equivalent Circuit and Bias Resistor Values
Maximum Ratings (Ta = 25��� �C)
Weight: 2.4mg
Unit: mm