RN1113F ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors Simplify circuit design Reduce a quantity of part ..
RN1113MFV ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C) TOSHIBA 2-1L1A Weight: 1.5 mg (typ.) Characteristic Symbol Rat ..
RN1114 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1114~RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114,RN1115,RN1116,RN1 ..
RN1115 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1114~RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114,RN1115,RN1116,RN1 ..
RN1116 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors. Simplify circuit design Reduce a quantity of pa ..
RN1116MFV ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage RN111 ..
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RN1113F
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1112F ,RN1113F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN11 12F ,RN1113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2112F, RN2113F
Equivalent Circuit Maximum Ratings (Ta = 25��� �C) Tstg −55~150
Electrical Characteristics (Ta = 25��� �C) 100 ― ―
Unit: mm
