RN1113MFV ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C) TOSHIBA 2-1L1A Weight: 1.5 mg (typ.) Characteristic Symbol Rat ..
RN1114 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1114~RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114,RN1115,RN1116,RN1 ..
RN1115 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1114~RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114,RN1115,RN1116,RN1 ..
RN1116 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors. Simplify circuit design Reduce a quantity of pa ..
RN1116MFV ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage RN111 ..
RN1117 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications With built-in bias resistors. Simplify circuit design Reduce a quantity of pa ..
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RTE24024F , Power PCB Relay RT2
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RN1112MFV-RN1113MFV
Bias resistor built-in transistor (BRT)
RN1112MFV ,RN1113MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
(Bias Resistor built-in Transistor)
RN1112MFV , RN1113MFV Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of
parts, so enabling the manufacture of ever more compact equipment and
lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN2112MFV and RN2113MFV
Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Weight: 1.5 mg (typ.)
Unit: mm
Unit：mm
Pad Dimension（Reference）
