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RN1112-RN1113
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1112,RN1113
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1112,RN1113 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2112, RN2113
Equivalent Circuit
Maximum Ratings (Ta = 25°C) Tstg −55~150 °C
Electrical Characteristics (Ta = 25°C) 15.4 22 28.6 ―� ―�
Weight: 2.4mg
Unit: mm