RN1110MFV ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C)Weight: 1.5 mg (typ.) Characteristic Symbol Rating Unit Collec ..
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RN1111MFV ,Bias resistor built-in transistor (BRT)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
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RN1110MFV-RN1111MFV
Bias resistor built-in transistor (BRT)
RN1110MFV ,RN1111MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
(Bias Resistor built-in Transistor)
RN1110MFV , RN1111MFV Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so
enabling the manufacture of ever more compact equipment and lowering
assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN2110MFV, RN2111MFV
Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Weight: 1.5 mg (typ.)
Unit: mm
Unit：mm
Pad Dimension（Reference）
