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RN1107CT-RN1108CT-RN1109CT
Bias resistor built-in transistor (BRT)
RN1107CT ~ RN1109CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1107CT, RN1108CT, RN1109CT Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications Incorporating a bias resistor into a transistor reduces the number of
parts, which enable the manufacture of ever more compact
equipment and saves assembly cost. Complementary to RN2107CT to RN2109CT
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
Weight: 0.75 mg (typ.)
R1
R2
