RN1105MFV ,Bias resistor built-in transistor (BRT)Applications Unit: mm 1.2 ± 0.05z Ultra-small package, suited to very high density mounting 0.80 ± ..
RN1106 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1101RN1106 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101,RN1102,RN1103 RN ..
RN1106ACT ,Bias resistor built-in transistor (BRT)Applications ３• Incorporating a bias resistor into a transistor reduces the number of parts, whic ..
RN1106CT ,Bias resistor built-in transistor (BRT)Absolute Maximum Ratings (Ta = 25°C) Characteristics SymbolRating UnitCollector-base voltage V 20 V ..
RN1106F ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications Unit in mmWith built-in bias resistors Simplify circuit design Reduce a quanti ..
RN1106FT ,Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications. High-density mount is possible because of devices housed in very thin TESM pac ..
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RN1101MFV-RN1102MFV-RN1103MFV-RN1104MFV-RN1105MFV-RN1106MFV
Bias resistor built-in transistor (BRT)
RN1101MFV∼RN1106MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1101MFV, RN1102MFV , RN1103MFV RN1104MFV, RN1105MFV , RN1106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts,
so enabling the manufacture of ever more compact equipment and
lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN2101MFV to RN2106MFV
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm)
Weight: 1.5 mg (typ.)
Unit: mm
Pad Dimension（Reference） Unit: mm
