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RMPA2059
3V WCDMA/CDMA Power Amplifier Module
RMPA2059 September 2004 RMPA2059 3V WCDMA PowerEdge™ Power Amplifier Module General Description Features The RMPA2059 power amplifier module (PAM) is designed • Single positive-supply operation and low power and for WCDMA applications. The 2 stage PAM is internally shutdown modes matched to 50Ω to minimize the use of external • 40% CDMA efficiency at +27dBm average output power components and features a low-power mode to reduce • Compact LCC package- 4.0 x 4.0 x 1.5 mm with industry standby current and DC power consumption during peak standard pinout phone usage. High power-added efficiency and excellent • Internally matched to 50Ω and DC blocked RF input/ linearity are achieved using our InGaP Heterojunction output Bipolar Transistor (HBT) process. • Meets WCDMA performance requirements Device 1 Absolute Ratings Symbol Parameter Min Max Units Vcc1, Vcc2 Supply Voltages 0 5.0 V Vref Reference Voltage 2.7 5.0 V Vmode Power Control Voltage 0 3.0 V Pin RF Input Power - +5 dBm T Storage Temperature -55 +150 °C STG Note: 1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. Module Block Diagram GND VCC1, VCC2 PA MODULE COLLECTOR (3, 6, 7, 9, 11) (1, 10) BIAS INTERSTAGE MATCH INPUT OUTPUT REF IN INPUT OUTPUT REF OUT MATCHING MATCHING STAGE STAGE (2) (8) NETWORK MMIC NETWORK INPUT STAGE OUTPUT STAGE BIAS BIAS VCC=3.4V (nom) VREF=3.0V (nom) 1920-1980 MHz 50 Ohms I/O BIAS VREF CONTROL (5) Vmode (4) Figure 1. RMPA2059 WCDMA Power Amplifier Module Functional Block Diagram ©2004 RMPA2059 Rev. D
