RMPA0963 ,Cellular CDMA and CDMA2000-1X Power Amplifier ModuleGeneral Description■ 38% CDMA/WCDMA efficiency at +28 dBm Pout The RMPA0963 Power Amplifier Module (P ..
RMPA0963 ,Cellular CDMA and CDMA2000-1X Power Amplifier Moduleapplications. Answering the call for ultra-low DC■ Linear operation in low-power mode up to +19 dBm ..
RMPA0963 ,Cellular CDMA and CDMA2000-1X Power Amplifier ModuleBlock Diagram(Top View)MMIC1 10 GNDVrefBIAS/MODE SWITCHVmode 2 GND9OUTPUT38 RF OUTGNDMATCHINPUT4 7R ..
RMPA0965 ,CDMA and CDMA2000-1X Power Amplifier ModuleBlock Diagram(Top View)MMICVcc1 Vcc21 8INPUTOUTPUTRF IN 2 7 RF OUTMATCHMATCHVmode3 6GNDDC BIAS CONT ..
RMPA0965 ,CDMA and CDMA2000-1X Power Amplifier Modulefeatures a low-powerpower mode to reduce standby current and DC power con-■ 52% AMPS mode efficiency ..
RMPA0967 ,CDMA and CDMA2000-1X Power Amplifier Modulefeatures a low-powerpower mode to reduce standby current and DC power con-■ 52% AMPS mode efficiency ..
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RMPA0963
Cellular CDMA and CDMA2000-1X Power Amplifier Module
RMPA0963 i-Lo™ Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary) PRELIMINARY February 2005 RMPA0963 i-Lo™ Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module Features General Description ■ 38% CDMA/WCDMA efficiency at +28 dBm Pout The RMPA0963 Power Amplifier Module (PAM) is Fairchild’s lat- est innovation in 50 Ohm matched, surface mount modules tar- ■ 14% CDMAA/WCDMA efficiency (80 mA total current) at geting Cellular CDMA/WCDMA, AMPS and Wireless Local +16 dBm Pout Loop (WLL) applications. Answering the call for ultra-low DC ■ Linear operation in low-power mode up to +19 dBm power consumption and extended battery life in portable elec- ■ 50% AMPS mode efficiency at +31 dBm Pout tronics, the RMPA0963 uses novel proprietary circuitry to dra- ■ Low quiescent current (Iccq): 20 mA in low-power mode matically reduce amplifier current at low to medium RF output ■ Single positive-supply operation with low power and power levels (≤ +16 dBm), where the handset most often oper- shutdown modes ates. A simple two-state Vmode control is all that is needed to • 3.4V typical Vcc operation reduce operating current by more than 50% at 16 dBm output • Low Vref (2.85V) compatible with advanced handset power, and quiescent current (Iccq) by as much as 70% com- chipsets pared to traditional power-saving methods. No additional cir- cuitry, such as DC-to-DC converters, are required to achieve ■ Compact Lead-free compliant LCC package – this remarkable improvement in amplifier efficiency. Further, the (4.0 X 4.0 x 1.5 mm nominal) 4x4x1.5 mm LCC package is pin-compatible and a drop-in ■ Industry standard pinout replacement for last generation 4x4 mm PAMs widely used ■ Internally matched to 50 Ohms and DC blocked RF today, minimizing the design time to apply this performance- input/output enhancing technology. The multi-stage GaAs Microwave Mono- ■ Meets IS-95/CDMA2000-1XRTT/WCDMA performance lithic Integrated Circuit (MMIC) is manufactured using Fairchild requirements RF’s InGaP Heterojunction Bipolar Transistor (HBT) process. Device Functional Block Diagram (Top View) MMIC 1 10 GND Vref BIAS/MODE SWITCH Vmode 2 GND 9 OUTPUT 3 8 RF OUT GND MATCH INPUT 4 7 RF IN GND MATCH Vcc1 5 6 Vcc2 11 (paddle ground on package bottom) ©2005 1 RMPA0963 i-Lo™ Rev. D
