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Partno	Mfg	Dc	Qty	Available	Descript
RHRP30100	FSC	N/a	68	avai	30A, 1000V Hyperfast Diode
RHRP30100	N/A	N/a	300	avai	30A, 1000V Hyperfast Diode

RHRP30100 ,30A, 1000V Hyperfast DiodeFeaturesThe RHRP30100 is a hyperfast diode with soft recovery • Hyperfast with Soft Recovery. . . . ..
RHRP30100 ,30A, 1000V Hyperfast Diode
RHRP30120 ,30A, 1200V Hyperfast DiodeApplicationselectrical noise in many power switching circuits, reducing Switching Power Suppliespo ..
RHRP30120 ,30A, 1200V Hyperfast Diode
RHRP30120 ,30A, 1200V Hyperfast DiodeRHRP30120Data Sheet January 200230A, 1200V Hyperfast Diode
RHRP30120 ,30A, 1200V Hyperfast DiodeFeaturesThe RHRP30120 is a hyperfast diode with soft recovery• Hyperfast withSoft Recovery<65nschar ..
RSF010P03 , 4V Drive Pch MOS FET
RSF05G1-3P ,THYRISITOR SILICON PLANAR TYPE LOW POWER SWITCHING AND CONTROL APPLICATIONSRSF05G1−1P,RSF05G1−3P,RSF05G1−5P TOSHIBA THYRISITOR SILICON PLANAR TYPE RSF05G1−1P,RSF05G1−3P,RSF ..
RSF05G1-5P ,THYRISITOR SILICON PLANAR TYPE LOW POWER SWITCHING AND CONTROL APPLICATIONSAPPLICATIONS Unit: mm
Repetitive Peak Off−State Voltage : V = 400VDRM Repetitive Peak Reverse ..
RSF05G1-5P ,THYRISITOR SILICON PLANAR TYPE LOW POWER SWITCHING AND CONTROL APPLICATIONSAPPLICATIONS Unit: mm
Repetitive Peak Off−State Voltage : V = 400VDRM Repetitive Peak Reverse ..
RSFJL , 0.5 AMP. Surface Mount Fast Recovery Rectifiers
RSFML , 0.5 AMP. Surface Mount Fast Recovery Rectifiers

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RHRP30100
30A, 1000V Hyperfast Diode
RHRP30100
30A, 1000V Hyperfast Diode
The RHRP30100 is a hyperfast diode with soft recovery
characteristics (t
< 65ns). It has half the recovery time of
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49064.
Symbol
Features Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <65ns Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175 Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V Avalanche Energy Rated Planar Construction
Applications Switching Power Supplies Power Switching Circuits General Purpose
Packaging
JEDEC TO-220AC
Ordering Information
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
= 25
C, Unless Otherwise Specified
RHRP30100 UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RRM
1000 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
1000 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
1000 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
= 95 A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
FRM
(Square Wave, 20kHz) A
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
FSM
(Halfwave, 1 Phase, 60Hz)
325 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
125 W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AVL mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
-65 to 175