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RGP10DGSN/a39000avaiFast Rectifiers (Glass Passivated)


RGP10D ,Fast Rectifiers (Glass Passivated)Features• 1.0 ampere operation at T = 55°CAwith no thermal runaway.• High temperature metallurgical ..
RGP10D-E3-73 , Glass Passivated Junction Fast Switching Rectifier
RGP10G ,Fast Rectifiers (Glass Passivated)Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.RGP RGP RGP ..
RGP10G ,Fast Rectifiers (Glass Passivated)Features• 1.0 ampere operation at T = 55°CAwith no thermal runaway.• High temperature metallurgical ..
RGP10J ,Fast Rectifiers (Glass Passivated)Features• 1.0 ampere operation at T = 55°CAwith no thermal runaway.• High temperature metallurgical ..
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RGP10D
Fast Rectifiers (Glass Passivated)
RGP10A-RGP10M RGP10A - RGP10M Features • 1.0 ampere operation at T = 55°C A with no thermal runaway. • High temperature metallurgically bonded construction. • Glass passivated cavity-free junction. DO-41 COLOR BAND DENOTES CATHODE • Typical I less than 1μA. R • Fast switching for high efficiency. Fast Rectifiers (Glass Passivated) Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units 10A 10B 10D 10G 10J 10K 10M V Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V RRM I Average Rectified Forward Current, F(AV) 1.0 A .375 " lead length @ T = 55°C L I Non-repetitive Peak Forward Surge Current FSM 30 A 8.3 ms Single Half-Sine-Wave Storage Temperature Range -65 to +175 T °C stg T Operating Junction Temperature -65 to +175 °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 3.0 W D Thermal Resistance, Junction to Ambient 50 R °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Device Units 10A 10B 10D 10G 10J 10K 10M V Forward Voltage @ 1.0 A 1.3 V F t Reverse Recovery Time rr 150 250 500 ns I = 0.5 A, I = 1.0 A, I = 0.25 A F R rr I 5.0 μA R Reverse Current @ rated V T = 25°C R A 200 μA T = 150°C A C Total Capacitance T 15 pF V = 4.0 V, f = 1.0 MHz R 2001 RPG10A - RPG10M, Rev. C
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