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RFP14N05HARRISN/a2032avai14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs


RFP14N05 ,14A, 50V, 0.100 Ohm, N-Channel Power MOSFETsFeaturesMOSFETs• 14A, 50VThese are N-channel power MOSFETs manufactured using = 0.100Ω•rDS(ON)the ..
RFP-150N50TE , Aluminum Nitride Terminations
RFP15P05 ,15A, 50V, 0.150 Ohm, P-Channel Power MOSFETsFeaturesMOSFETs• 15A, 50VThese are P-Channel power MOSFETs manufactured using = 0.150Ω•rDS(ON)the ..
RFP15P06 ,15A/ 60V/ 0.150 Ohm/ P-Channel Power MOSFETsFeaturesMOSFETs• 15A, 60VThese P-Channel power MOSFETs are manufactured using = 0.150Ω•rDS(ON)the M ..
RFP-250250N6Z50-2 , Aluminum Nitride Terminations 16 Watts, 50ohm
RFP25N05 ,25A/ 50V/ 0.047 Ohm/ N-Channel Power MOSFETFeaturesMOSFET• 25A, 50VThe RFP25N05 N-channel power MOSFET is manufactured = 0.047Ω•rDS(ON)using t ..
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RFP14N05
14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs
RFD14N05, RFD14N05SM, RFP14N05
14A, 50V, 0.100 Ohm, N-Channel Power
MOSFETs

These are N-channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09770.
Features
14A, 50V
DS(ON)
= 0.100 Temperature Compensating PSPICE
Model Peak Current vs Pulse Width Curve UIS Rating Curve 175
C Operating Temperature Related Literature TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-251AA JEDEC TO-252AA
JEDEC TO-220AB
Ordering Information

NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05SM9A.
GATE
DRAIN (FLANGE)
SOURCE
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