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RFP12N06RLERFMDN/a3000avai12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs


RFP12N06RLE ,12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETsRFD12N06RLE, RFD12N06RLESM,RFP12N06RLEData Sheet July 1999 File Number 2407.412A, 60V, 0.135 Ohm, N ..
RFP12N06RLE ,12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETsFeaturesJEDEC TO-251AA JEDEC TO-252AA• Ultra Low On-ResistanceSOURCEDRAIN-r = 0.063Ω, V = 10VGS DS( ..
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RFP12P10 ,12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETsFeaturesPower MOSFETs• 12A, 80V and 100VThe RFP12P08, and RFP12P10 are P-Channel= 0.300Ω•rDS(ON)enh ..
RFP14N05 ,14A, 50V, 0.100 Ohm, N-Channel Power MOSFETsFeaturesMOSFETs• 14A, 50VThese are N-channel power MOSFETs manufactured using = 0.100Ω•rDS(ON)the ..
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RFP12N06RLE
17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET
RFD12N06RLE, RFD12N06RLESM,
RFP12N06RLE
17A, 60V , 0.071 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
Packaging
Symbol
Features
Ultra Low On-Resistance DS(ON) = 0.063Ω, VGS = 10V
-rDS(ON) = 0.071Ω, VGS = 5V Simulation Models Temperature Compensated PSPICE® and SABER©
Electrical Models Spice and SABER© Thermal Impedance Models Peak Current vs Pulse Width Curve UIS Rating Curve Switching Time vs R GS Curves
Ordering Information
Absolute Maximum Ratings
TC = 25o C, Unless Otherwise Specified
JEDEC TO-251AA JEDEC TO-252AA
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
RFD12N06RLE
GATE
RFD12N06RLESM
GATE
SOURCE
DRAIN
(FLANGE)
GATE
DRAIN (FLANGE)
SOURCE
RFP12N06RLE

NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, i.e. RFD12N06RLESM9A.
RFD12N06RLE, RFD12N06RLESM,
RFP12N06RLE UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 60 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 60 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±16 V
Drain Current
Continuous (TC= 25o C, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Continuous (TC= 25o C, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Continuous (TC= 135o C, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Continuous (TC= 135o C, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Derate Above 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.327oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
260CC
NOTE: TJ = 25o C to 150oC.
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