RFG60P06E ,60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET RFG60P06EData Sheet January 200260A, 60V, 0.030 Ohm, ESD Rated,
RFG60P06E ,60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFETFeaturesP-Channel Power MOSFET• 60A, 60VThe RFG60P06E P-Channel power MOSFET is = 0.030Ω•rDS(ON)ma ..
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RFG60P06E
60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET
RFG60P06E
60A, 60V, 0.030 Ohm, ESD Rated,
P-Channel Power MOSFETThe RFG60P06E P-Channel power MOSFET is
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
The RFG60P06E incorporates ESD protection and is
designed to withstand 2kV (Human Body Model) of ESD.
Formerly developmental type TA09836.
Features 60A, 60V
DS(ON)
= 0.030 Temperature Compensating PSPICE
Model 2kV ESD Rated Peak Current vs Pulse Width Curve UIS Rating Curve 175
C Operating Temperature Related Literature
Symbol
Packaging
JEDEC STYLE TO-247
Ordering InformationNOTE: When ordering use the entire part numberr RFG60P06E.
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
GATE
