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RFD4N06L-RFD4N06LSM
4A/ 60V/ 0.600 Ohm/ Logic Level/ N-Channel Power MOSFETs
RFD4N06L, RFD4N06LSM
4A, 60V , 0.600 Ohm, Logic Level,
N-Channel Power MOSFETsThe RFD4N06L,RFD4N06LSM are N-Channel enhancement
mode silicon gate power field effect transistors specifically
designed for use with logic level (5 volt) driving sources in
applications such as programmable controllers, automotive
switching, and solenoid drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conduction at gate biases in the 3-5 volt
range, thereby facilitating true on-off power control from logic
circuit supply voltages.
Formerly developmental type TA09520.
Features 4A, 60V
•rDS(ON) = 0.600Ω Design Optimized for 5 Volt Gate Drive Can be Driven Directly From Q-MOS, N-MOS,
or TTL Circuits SOA is Power Dissipation Limited 175o C Rated Junction Temperature Logic Level Gate High Input Impedance Related Literature TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-251AA JEDEC TO-252AA
Ordering InformationNOTE: When ordering, use the entire part number.
GATE
SOURCE
DRAIN
(FLANGE)
