REG113NA-2.5/3K ,DMOS 400mA Low-Dropout RegulatorREG113SBVS031D – MARCH 2001 – REVISED SEPTEMBER 2005DMOS400mA Low-Dropout RegulatorDESCRIPTION
REG113NA-2.85/250 ,DMOS 400mA Low-Dropout Regulator(1)ABSOLUTE
REG113NA-2.85/3K ,DMOS 400mA Low-Dropout RegulatorELECTRICAL CHARACTERISTICSBoldface limits apply over the specified temperature range, T = –40°C to ..
REG113NA-3.3/250 ,DMOS 400mA Low-Dropout RegulatorREG113SBVS031D – MARCH 2001 – REVISED SEPTEMBER 2005DMOS400mA Low-Dropout RegulatorDESCRIPTION
REG113NA-3.3/3K ,25TYPICAL CHARACTERISTICSFor all models, at T = +25°C and V = 1.8V, unless otherwise noted.J ENABLEOU ..
REG113NA-3/250 ,DMOS 400mA Low-Dropout RegulatorFEATURESThe REG113 is a family of low-noise, low-dropout linear* CAP-FREE DMOS TOPOLOGY:regulators ..
RN2903FE ,Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor buil ..
RN2904 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN2901~RN2906 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2901,RN2902,RN2903,RN2 ..
RN2905 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications Unit in mm Including two devices in US6 (ultra super mini type with 6 leads) Wit ..
RN2905 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications Unit in mm Including two devices in US6 (ultra super mini type with 6 leads) Wit ..
RN2905FE ,Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications. Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Inc ..
RN2906 ,Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN2901~RN2906 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2901,RN2902,RN2903,RN2 ..
REG113EA-2.5/250-REG113EA-3.3/250-REG113EA-3.3/2K5-REG113EA-3/2K5-REG113EA-3/2K5G4-REG113EA33250G4-REG113EA-5/2K5G4-REG113NA-2.5/250-REG113NA-2.5/250G4-REG113NA-2.5/3K-REG113NA-2.85/250-REG113NA-2.85/3K-REG113NA-3.3/250-REG113NA-3.3/3K-REG113NA-3/250-REG113NA-3/250G4-REG113NA-3/3K
DMOS 400mA Low-Dropout Regulator
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
REG113
FEA TURES CAP-FREE DMOS TOPOLOGY:
Ultra Low Dropout Voltage:
250mV typ at 400mA
Output Capacitor not Required for Stability UP TO 500mA PEAK, TYPICAL FAST TRANSIENT RESPONSE VERY LOW NOISE: 28μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: GND = 850μA at IOUT = 400mA
Not Enabled: I GND = 0.01μA 2.5V, 2.85V, 3.0V, 3.3V, AND 5.0V OUTPUT VERSIONS OTHER OUTPUT VOLTAGES AVAILABLE UPON
REQUEST FOLDBACK CURRENT LIMIT THERMAL PROTECTION SMALL SURFACE-MOUNT PACKAGES:
SOT23-5 and MSOP-8
APPLICATIONS PORTABLE COMMUNICATION DEVICES BATTERY-POWERED EQUIPMENT PERSONAL DIGITAL ASSISTANTS MODEMS BAR-CODE SCANNERS BACKUP POWER SUPPLIES
DESCRIPTIONThe REG113 is a family of low-noise, low-dropout linear
regulators with low ground pin current. Its new DMOS topol-
ogy provides significant improvement over previous designs,
including low-dropout voltage (only 250mV typ at full load),
and better transient performance. In addition, no output
capacitor is required for stability, unlike conventional low-
dropout regulators that are difficult to compensate and re-
quire expensive low ESR capacitors greater than 1μF.
Typical ground pin current is only 850μA (at IOUT = 400mA)
and drops to 10nA when not enabled. Unlike regulators with
PNP pass devices, quiescent current remains relatively con-
stant over load variations and under dropout conditions.
The REG113 has very low output noise (typically 28μVrms
for VOUT = 3.3V with CNR = 0.01μF), making it ideal for use
in portable communications equipment. Accuracy is main-
tained over temperature, line, and load variations. Key
parameters are tested over the specified temperature range
(–40°C to +85°C).
The REG113 is well protected—internal circuitry provides a
current limit which protects the load from damage, further-
more, thermal protection circuitry keeps the chip from being
damaged by excessive temperature. The REG113 is avail-
able in SOT23-5 and MSOP-8 packages.
SBVS031D – MARCH 2001 – REVISED SEPTEMBER 2005
Enable
0.1μF(1)
VOUTVIN
NR(2)
NOTES: (1) Optional. (2) NR = Noise Reduction.
DMOS
400mA Low-Dropout Regulator
