REF5030IDG4 ,Low Noise, Very Low Drift, Precision VOLTAGE REFERENCE 8-SOIC -40 to 125features, combined with– Standard-Grade: 0.1% (Max)very low noise, make the REF50xx family ideal fo ..
REF5040 ,Low Noise, Very Low Drift, Precision VOLTAGE REFERENCEfeatures, combined with– Standard-Grade: 0.1% (Max)very low noise, make the REF50xx family ideal fo ..
REF5040AID ,Low Noise, Very Low Drift, Precision VOLTAGE REFERENCE 8-SOIC -40 to 125Features list; added Excellent Long-Term Stability bullet ...... 1• Added Thermal Hysteresis parame ..
REF5040AIDGKR ,Low Noise, Very Low Drift, Precision VOLTAGE REFERENCE 8-VSSOP -40 to 125Features... 19.4 Device Functional Modes.... 182 Applications..... 110 Applications and Implementat ..
REF5040AIDR ,Low Noise, Very Low Drift, Precision VOLTAGE REFERENCE 8-SOIC -40 to 125Electrical Characteristics table ....... 6• Changed third bullet in Layout Guidelines section .. 21 ..
REF5040ID ,Low Noise, Very Low Drift, Precision VOLTAGE REFERENCE 8-SOIC -40 to 125Features 3 DescriptionThe REF50xx is a family of low-noise, low-drift, very1• Low Temperature Drift ..
RN1906AFS ,Bias resistor built-in transistor (BRT), 2-in-1absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
RN1906FE ,Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.RN1901FE~RN1906FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor buil ..
RN1907 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1907~RN1909 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1907,RN1908,RN1909 Un ..
RN1907FE ,Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.Applications. Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Inc ..
RN1908 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications Including two devices in US6 (ultra super mini type with 6 leads) With built-in ..
RN1908 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications Including two devices in US6 (ultra super mini type with 6 leads) With built-in ..
REF5030-REF5030AID-REF5030AIDG4-REF5030AIDGKR-REF5030AIDGKT-REF5030ID-REF5030ID G4-REF5030IDG4
Low Noise, Very Low Drift, Precision VOLTAGE REFERENCE
OPA365
ADS8326
REF5040Input Signal,
0 V to 4 V
5 V
124
1 nF
VDD
GNDREF
VIN VOUT
GND
+5V C2
22 μF
5 V
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Reference
Design
REF5010, REF5020, REF5025, REF5030
REF5040, REF5045, REF5050SBOS410H–JUNE 2007–REVISED JUNE 2016
REF50xx
Low-Noise, Very Low Drift, Precision Voltage Reference Features Low Temperature Drift: High-Grade:3 ppm/°C (Max) Standard-Grade:8 ppm/°C (Max) High Accuracy: High-Grade: 0.05% (Max) Standard-Grade: 0.1% (Max) Low Noise:3 μVPP/V Excellent Long-Term Stability: 45 ppm/1000hr (Typ) after 1000 Hours High-Output Current: ±10 mA Temperature Range: –40°Cto 125°C
Applications Precision Data Acquisition Systems ATE Equipment Industrial Process Controls Medical Instrumentation Pressure and Temperature Transmitters Seismic monitoring systems
DescriptionThe REF50xxisa familyof low-noise, low-drift, very
high precision voltage references. These references
are capableof both sinking and sourcing current, and
have excellent line and load regulation.
Excellent temperature drift (3 ppm/°C) and high
accuracy (0.05%) are achieved using proprietary
design techniques. These features, combined with
very low noise, make the REF50xx family ideal for
usein high-precision data acquisition systems.
Each reference voltageis availablein both high grade
(REF50xxIDGK and REF50xxID) and standard grade
(REF50xxAIDGK and REF50xxAID). The reference
voltages are offered in 8-pin VSSOP and SOIC
packages, and are specified from –40°Cto 125°C.
Device Information(1)(1) Forall available packages, see the orderable addendumat
the endofthe data sheet.
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Simplified Schematic
