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Home ›  RR7 > REF3330AIDBZR-REF3330AIDBZRG4-REF3330AIDBZT-REF3330AIDCKR,30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125
REF3330AIDBZR-REF3330AIDBZRG4-REF3330AIDBZT-REF3330AIDCKR Fast Delivery,Good Price
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Partno Mfg Dc Qty AvailableDescript
REF3330AIDBZRTIN/a218000avai30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125
REF3330AIDBZRG4TIN/a3000avai30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125
REF3330AIDBZTTIN/a4560avai30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125
REF3330AIDCKRTIN/a708avai30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SC70 -40 to 125


REF3330AIDBZR ,30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125Electrical Characteristics....... 613.3 Receiving Notification of Documentation Updates 207.6 Typic ..
REF3330AIDBZRG4 ,30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125Features 3 DescriptionThe REF33xx is a low-power, precision, low-dropout1• Microsize Packages: SC70 ..
REF3330AIDBZT ,30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125Electrical Characteristics table ..... 6• Changed minimum supply voltage value in Device Functional ..
REF3330AIDCKR ,30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SC70 -40 to 125 SBOS392G–AUGUST 2007–REVISED DECEMBER 2016Changes from Revision B (February 2014) to Revision C Pa ..
REF3333AIDBZR ,30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125 SBOS392G–AUGUST 2007–REVISED DECEMBER 2016Changes from Revision B (February 2014) to Revision C Pa ..
REF3333AIDBZT ,30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125Features 3 DescriptionThe REF33xx is a low-power, precision, low-dropout1• Microsize Packages: SC70 ..
RN1606 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications Including two devices in SM6 (super mini type with 6 leads) With built-in bias r ..
RN1607 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1607~RN1609 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1607,RN1608,RN1609 Un ..
RN1610 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications Including two devices in SM6 (super mini type with 6 leads) With built-in bias r ..
RN1611 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1610,RN1611 TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) RN1610,RN1611 Unit: mmS ..
RN1701 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications Including two devices in USV (ultra super mini type with 5 leads) With built-in ..
RN1702 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1701~RN1706 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1701,RN1702,RN1703 RN1 ..


REF3330AIDBZR-REF3330AIDBZRG4-REF3330AIDBZT-REF3330AIDCKR
30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125
Sample & Support & Product Tools & Technical Community Buy Folder Documents Software REF3312, REF3318, REF3320, REF3325, REF3330, REF3333 SBOS392G – AUGUST 2007 – REVISED DECEMBER 2016 REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference 1 Features 3 Description The REF33xx is a low-power, precision, low-dropout 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 voltage reference family available in tiny SC70-3 and • Low Supply Current: 3.9μA (typ) SOT-23-3 packages, and in a 1.5-mm × 1.5-mm • Extremely Low Dropout Voltage: 110 mV (typ) UQFN-8 package. Small size and low power consumption (5-μA max) make the REF33xx ideal for • High Output Current: ±5 mA a wide variety of portable and battery-powered • Low Temperature Drift: 30 ppm/°C (max) applications. • High Initial Accuracy: ±0.15% (max) The REF33xx can be operated at a supply voltage • 0.1-Hz to 10-Hz Noise: 35μV (REF3312) PP 180 mV above the specified output voltage under • Voltage Options: 1.2 V, 1.8 V, 2.5 V, 3 V, 3.3 V normal load conditions, with the exception of the REF3312, which has a minimum supply voltage of 2 Applications 1.7 V. All models are specified for the wide temperature range of –40°C to +125°C. • Portable Equipment (1) • Tablets and Smartphones Device Information • Hard Disk Drives PART NUMBER PACKAGE BODY SIZE (NOM) • Sensor Modules SOT-23 (3) 2.92 mm × 1.30 mm • Data Acquisition Systems REF33xx SC70 (3) 2.00 mm × 1.25 mm UQFN (8) 1.50 mm × 1.50 mm • Medical Equipment • Test Equipment (1) For all available packages, see the package option addendum at the end of the datasheet. REF3312 in a Single-Supply Signal Chain Dropout Voltage vs Load Current +2.7V 200 R R 3 2 180 V CC 160 +2.7V MSP430x20x3PW +125°C P1.2 140 (1) R 1 Enable 66.5W 120 A0+ 16-Bit ADC C V 1 100 IN 1.5nF 80 REF3312 VREF 60 OPA333, C V SS +25°C 2 OPA363, 1mF 40 or -40°C OPA369 20 0 -5 -4 -3 -2 -1 0 1 2 3 4 5 Load Current (mA) 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. Dropout Voltage (mV)
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