REF3125AIDBZR ,15ppm/C Max/ 100UA/ SOT23-3 SERIES VOLTAGE REFERENCEMaximum Ratings may cause permanent damage to the device. These are stress ratingsonly, which do no ..
REF3125AIDBZRG4 ,20ppm/Degrees C Max, 100uA, SOT23-3 Series Voltage Reference 3-SOT-23 -40 to 125 SBVS046D–DECEMBER 2003–REVISED MARCH 20165 Device Comparison TablePRODUCT VOLTAGE (V)REF3112 1.25R ..
REF3125AIDBZT ,15ppm/C Max/ 100UA/ SOT23-3 SERIES VOLTAGE REFERENCEBlock Diagram... 10Information..... 188.3 Feature Description.... 104 Revision HistoryNOTE: Page nu ..
REF3130AIDBZR ,15ppm/C Max/ 100UA/ SOT23-3 SERIES VOLTAGE REFERENCEMaximum Ratings may cause permanent damage to the device. These are stress ratingsonly, which do no ..
REF3130AIDBZRG4 ,20ppm/Degrees C Max, 100uA, SOT23-3 Series Voltage Reference 3-SOT-23 -40 to 125Features 3 DescriptionThe REF31xx is a family of precision, low power, low1• MicroSize Package: SOT ..
REF3130AIDBZTG4 ,20ppm/Degrees C Max, 100uA, SOT23-3 Series Voltage Reference 3-SOT-23 -40 to 125 SBVS046D–DECEMBER 2003–REVISED MARCH 20165 Device Comparison TablePRODUCT VOLTAGE (V)REF3112 1.25R ..
RN142S , PIN diode
RN1442 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Muting And Switching ApplicationsApplications Unit in mmHigh emitter-base voltage: V = 25V (min) EBO High reverse h : reverse h ..
RN1501 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications Including two devices in SMV (super mini type with 5 leads)With built-in bias resi ..
RN1502 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1501RN1506 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1501,RN1502,RN1503 RN ..
RN1503 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1501RN1506 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1501,RN1502,RN1503 RN ..
RN1504 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1501RN1506 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1501,RN1502,RN1503 RN ..
REF3125AIDBZR-REF3125AIDBZRG4-REF3125AIDBZT
20ppm/Degrees C Max, 100uA, SOT23-3 Series Voltage Reference 3-SOT-23 -40 to 125
Dropout V
oltage (mV)
-15 -10 -5 0 5 10
Load Current (mA)
ADS7822VCC
DOUT
DCLOCK
VREF
+In
-In
GND F to 10Fm mF tomFm
3.3V
0.1Fm
VIN
Microcontroller
REF3133GND
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REF3112, REF3120, REF3125
REF3130, REF3133, REF3140SBVS046D –DECEMBER 2003–REVISED MARCH 2016
REF31xx 15ppm/°C Maximum, 100-µA, SOT-23 Series Voltage Reference Features MicroSize Package: SOT23-3 Low Dropout:5 mV High Output Current: ±10 mA High Accuracy: 0.2% Maximum LowIQ: 115 µA Maximum Excellent Specified Drift Performance: 15 ppm/°C (Maximum) from 0°Cto +70°C 20 ppm/°C (Maximum) from –40°Cto +125°C
Applications Portable, Battery-Powered Equipment Data Acquisition Systems Medical Equipment Hand-Held Test Equipment
DescriptionThe REF31xxisa familyof precision, low power, low
dropout, series voltage references availablein the
tiny 3-pin SOT-23 package.
The REF31xx's small size and low power
consumption (100 μA typical) makeit ideal for
portable and battery-powered applications. The
REF31xx does not requirea load capacitor, butis
stable with any capacitive load and can sink or
sourceupto10 mAof output current.
Unloaded, the REF31xx can operate on supplies
downto5 mV above the output voltage. All models
are specified for the wide temperature rangeof –40°C +125°C.
Device Information(1)(1) Forall available packages, see the orderable addendum
the endofthe data sheet.
Typical Application Dropout Voltagevs Load Current
