REF3030AIDBZR ,3.0V 50ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage ReferenceFeatures 3 DescriptionThe REF30xx is a precision, low-power, low-dropout1• microSize Package: SOT-2 ..
REF3030AIDBZTG4 ,3.0V 50ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125Electrical Characteristics.. 6• Added turnon settling time TYP value of 120 µs (deleted by mistake ..
REF3033 ,3.3V 50ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage ReferenceElectrical Characteristics.. 6• Added turnon settling time TYP value of 120 µs (deleted by mistake ..
REF3033AIDBZR ,3.3V 50ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage ReferenceFeatures 3 DescriptionThe REF30xx is a precision, low-power, low-dropout1• microSize Package: SOT-2 ..
REF3033AIDBZRG4 ,3.3V 50ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125Maximum Ratings(1)over operating free-air temperature range (unless otherwise noted)MIN MAX UNITSup ..
REF3033AIDBZRG4 ,3.3V 50ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125 SBVS032H–MARCH 2002–REVISED FEBRUARY 20185 Device Comparison TablePART NUMBER VOLTAGE (V)REF3012 1 ..
RN141S , PIN diode
RN1421 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1421RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1421,RN1422,RN1423,RN ..
RN1422 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications High current type (I (max) = 800mA) CWith built-in bias resistors Simplify ci ..
RN1423 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1421RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1421,RN1422,RN1423,RN ..
RN1424 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsApplications High current type (I (max) = 800mA) CWith built-in bias resistors Simplify ci ..
RN1425 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit ApplicationsRN1421RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1421,RN1422,RN1423,RN ..
REF3030AIDBZR-REF3030AIDBZTG4
3.0V 50ppm/C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference
Dropout V
oltage (mV) 5 10 15 20 25
Load Current (mA)Ω
ADS7822VCC
DOUT
DCLOCK
VREF
+In
–In
GND F to 10Fμ μF toμFμ
3.3 V
0.1Fμ
VIN
Microcontroller
REF3033GND
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REF3012, REF3020, REF3025, REF3030, REF3033, REF3040SBVS032H –MARCH 2002–REVISED FEBRUARY 2018
REF30xx 50-ppm/°C Max, 50-μA, CMOS Voltage Referencein SOT-23-3 Features microSize Package: SOT-23-3 Low Dropout:1 mV High Output Current:25 mA High Accuracy: 0.2% LowIQ:42 µA (Typical) Excellent Specified Drift Performance: 50 ppm/°C (Maximum) From 0°Cto 70°C 75 ppm/°C (Maximum) From –40°Cto +125°C
Applications Temperature and Pressure Transmitters Portable, Battery-Powered Equipment Data Acquisition Systems Medical Equipment Handheld Test Equipment
DescriptionThe REF30xxisa precision, low-power, low-dropout
voltage, reference family availableina tiny 3-pin
SOT-23 package. The REF30xx offers excellent
temperature drift and initial accuracy while operatinga quiescent currentof42 µA (typical).
The low power consumption and the relatively high
precision make the REF30xx very attractive for
powered industrial applications suchas pressure
temperature transmitter applications. The REF30xx
easyto usein intrinsically safe and explosion-proof
applications becauseit does not require
capacitortobe stable. The REF30xxis specified
the extended industrial temperature rangeof +125°C.
The REF30xx operates with supplies within1
output voltage under zero-load conditions. Engineers
can use the low dropout, small size, and low
consumptionof the REF30xxin portable and battery-
powered applications.
Device Information
Typical Application Dropout Voltagevs Load Current
